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公开(公告)号:US20170338102A1
公开(公告)日:2017-11-23
申请号:US15670349
申请日:2017-08-07
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Shinsuke KIMURA , Tatsuhiko KOIDE , Yoshihiro OGAWA
IPC: H01L21/02 , H01L21/306 , H01L21/67
CPC classification number: H01L21/02057 , H01L21/30604 , H01L21/67028 , H01L21/67109
Abstract: In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing.
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2.
公开(公告)号:US20200251356A1
公开(公告)日:2020-08-06
申请号:US16837574
申请日:2020-04-01
Applicant: TOSHIBA MEMORY CORPORATION
Inventor: Tatsuhiko KOIDE , Yoshihiro OGAWA , Masahiro KIYOTOSHI
Abstract: A semiconductor manufacturing apparatus according to the present embodiment comprises a chamber. A chemical-agent supply part is configured to supply a water-repellent agent or an organic solvent to a surface of a semiconductor substrate having been cleaned with a cleaning liquid in the chamber. A spray part is configured to spray a water-capture agent capturing water into an atmosphere in the chamber.
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