公开(公告)号：US20170338102A1

公开(公告)日：2017-11-23

申请号：US15670349

申请日：2017-08-07

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke KIMURA ,  Tatsuhiko KOIDE ,  Yoshihiro OGAWA

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/02057 ,  H01L21/30604 ,  H01L21/67028 ,  H01L21/67109

Abstract: In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing.

公开(公告)号：US20200251356A1

公开(公告)日：2020-08-06

申请号：US16837574

申请日：2020-04-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuhiko KOIDE ,  Yoshihiro OGAWA ,  Masahiro KIYOTOSHI

IPC: H01L21/67 ,  H01L21/02

Abstract: A semiconductor manufacturing apparatus according to the present embodiment comprises a chamber. A chemical-agent supply part is configured to supply a water-repellent agent or an organic solvent to a surface of a semiconductor substrate having been cleaned with a cleaning liquid in the chamber. A spray part is configured to spray a water-capture agent capturing water into an atmosphere in the chamber.