公开(公告)号：US20200251356A1

公开(公告)日：2020-08-06

申请号：US16837574

申请日：2020-04-01

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Tatsuhiko KOIDE ,  Yoshihiro OGAWA ,  Masahiro KIYOTOSHI

IPC: H01L21/67 ,  H01L21/02

Abstract: A semiconductor manufacturing apparatus according to the present embodiment comprises a chamber. A chemical-agent supply part is configured to supply a water-repellent agent or an organic solvent to a surface of a semiconductor substrate having been cleaned with a cleaning liquid in the chamber. A spray part is configured to spray a water-capture agent capturing water into an atmosphere in the chamber.

公开(公告)号：US20180005854A1

公开(公告)日：2018-01-04

申请号：US15708171

申请日：2017-09-19

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Hiroaki YAMADA ,  Yoshihiro OGAWA ,  Takeshi HIZAWA

IPC: H01L21/67 ,  C23F1/26 ,  B08B3/14 ,  H01L21/66 ,  H01L21/311

CPC classification number: H01L21/67086 ,  B08B3/14 ,  B81C2201/0138 ,  C23F1/26 ,  H01L21/31111 ,  H01L22/10 ,  Y10T137/0318

Abstract: A chemical liquid treatment apparatus includes processing chambers; a chemical liquid feeding unit configured to cyclically feed a chemical liquid into the processing chambers; and a modifying unit. The modifying unit, when using a chemical liquid in which an effect thereof varies with a chemical liquid discharge time, is configured to calculate a variation of the effect of the chemical liquid based on the chemical liquid discharge time and is configured to modify the chemical liquid discharge time for each of the processing chambers based on the calculated variation of the effect of the chemical liquid and a cumulative time of the chemical liquid discharge time.

公开(公告)号：US20170338102A1

公开(公告)日：2017-11-23

申请号：US15670349

申请日：2017-08-07

Applicant: TOSHIBA MEMORY CORPORATION

Inventor： Shinsuke KIMURA ,  Tatsuhiko KOIDE ,  Yoshihiro OGAWA

IPC: H01L21/02 ,  H01L21/306 ,  H01L21/67

CPC classification number: H01L21/02057 ,  H01L21/30604 ,  H01L21/67028 ,  H01L21/67109

Abstract: In one embodiment, a substrate treatment apparatus includes a housing configured to house a substrate. The apparatus further includes a chemical supplying module configured to supply one or more chemicals in a gas state to the substrate in the housing, the one or more chemicals including a first chemical that contains a silylation agent. The apparatus further includes a cooling module configured to cool the substrate in the housing while any of the one or more chemicals is supplied to the substrate in the housing.