摘要:
An active matrix substrate includes a thin film transistor, a scanning signal line, and a data signal line disposed on the substrate. A gate electrode of the transistor is connected to the scanning signal line, a source electrode thereof is connected to the data signal line, and a drain electrode thereof is connected to a pixel electrode; and an upper electrode is disposed so as to oppose a storage capacitor wiring pattern at least via an insulating layer. Within a pixel region, the upper electrode includes three divided electrodes in a region opposing the storage capacitor wiring pattern, and a central divided electrode of the three divided electrodes has the smallest area.
摘要:
An active matrix substrate comprises a thin film transistor disposed at the crossing point of a scanning signal line with a data signal line on the substrate, with a gate electrode of the transistor being connected to the scanning signal line, a source electrode thereof being connected to the data signal line and a drain electrode thereof being connected to an interconnection electrode, and a storage capacitor upper electrode disposed so as to oppose a storage capacitor wiring pattern at least via an insulating layer and connected to the interconnection electrode and a pixel electrode. The storage capacitor upper electrode comprises at least three divided electrodes in the region opposing the storage capacitor wiring pattern.
摘要:
The active matrix substrate of the present invention is the active matrix substrate in which the faulty connection in a storage capacitor element as caused by a short circuit between storage capacitor electrodes due to a conductive foreign material or a pinhole in an insulating layer or by a short circuit between a data signal line and a storage capacitor upper electrode can be repaired with ease. The active matrix substrate of the present invention is the active matrix substrate comprising a thin film transistor disposed at the crossing point of a scanning signal line with a data signal line on the substrate, with a gate electrode of the transistor being connected to the scanning signal line, a source electrode thereof being connected to the data signal line and a drain electrode thereof being connected to an interconnection electrode, and a storage capacitor upper electrode disposed so as to oppose a storage capacitor wiring pattern at least via an insulating layer and connected to the interconnection electrode and a pixel electrode, wherein the storage capacitor upper electrode comprises at least three divided electrodes in the region opposing the storage capacitor wiring pattern.
摘要:
An active matrix substrate includes a thin film transistor disposed at the crossing point of a scanning signal line with a data signal line on the substrate, with a gate electrode of the transistor being connected to the scanning signal line, a source electrode thereof being connected to the data signal line and a drain electrode thereof being connected to an interconnection electrode, and a storage capacitor upper electrode disposed so as to oppose a storage capacitor wiring pattern at least via an insulating layer and connected to the interconnection electrode and a pixel electrode. The storage capacitor upper electrode includes at least three divided electrodes in the region opposing the storage capacitor wiring pattern.
摘要:
The active matrix substrate of the present invention is the active matrix substrate in which the faulty connection in a storage capacitor element as caused by a short circuit between storage capacitor electrodes due to a conductive foreign material or a pinhole in an insulating layer or by a short circuit between a data signal line and a storage capacitor upper electrode can be repaired with ease. The active matrix substrate of the present invention is the active matrix substrate comprising a thin film transistor disposed at the crossing point of a scanning signal line with a data signal line on the substrate, with a gate electrode of the transistor being connected to the scanning signal line, a source electrode thereof being connected to the data signal line and a drain electrode thereof being connected to an interconnection electrode, and a storage capacitor upper electrode disposed so as to oppose a storage capacitor wiring pattern at least via an insulating layer and connected to the interconnection electrode and a pixel electrode, wherein the storage capacitor upper electrode comprises at least three divided electrodes in the region opposing the storage capacitor wiring pattern.
摘要:
An active matrix substrate has a structure that prevents a drain extraction line from breaking without a plurality of active elements such as thin film transistor elements, metal-insulator-metal elements, MOS transistor elements, diodes, and varistors being disposed, and is suited for use in a large-size liquid crystal television or a like liquid crystal display device equipped with a large-size liquid crystal display panel. The active matrix substrate includes an active element connected, via a drain extraction line, to a storage capacitor upper electrode, wherein the drain extraction line has at least two routes.
摘要:
The active matrix substrate of the present invention is an active matrix substrate in which a drain extraction line can be prevented from breaking without a plurality of active elements such as TFT (thin film transistor) elements, MIM (metal-insulator-metal) elements, MOS transistor elements, diodes, and varistors being disposed, and is suited for use in large-size liquid crystal television or a like liquid crystal display device equipped with a large-size liquid crystal display panel. The active matrix substrate of the present invention is an active matrix substrate comprising an active element connected, via a drain extraction line, to a storage capacitor upper electrode, wherein the drain extraction line has at least two routes.
摘要:
The active matrix substrate of the present invention is an active matrix substrate in which a drain extraction line can be prevented from breaking without a plurality of active elements such as TFT (thin film transistor) elements, MIM (metal-insulator-metal) elements, MOS transistor elements, diodes, and varistors being disposed, and is suited for use in large-size liquid crystal television or a like liquid crystal display device equipped with a large-size liquid crystal display panel. The active matrix substrate of the present invention is an active matrix substrate comprising an active element connected, via a drain extraction line, to a storage capacitor upper electrode, wherein the drain extraction line has at least two routes.
摘要:
An active matrix substrate has a structure that prevents a drain extraction line from breaking without a plurality of active elements such as thin film transistor elements, metal-insulator-metal elements, MOS transistor elements, diodes, and varistors being disposed, and is suited for use in a large-size liquid crystal television or a like liquid crystal display device equipped with a large-size liquid crystal display panel. The active matrix substrate includes an active element connected, via a drain extraction line, to a storage capacitor upper electrode, wherein the drain extraction line has at least two routes.
摘要:
An active matrix substrate includes a substrate, a TFT formed on the substrate, a storage capacitor element formed on the substrate, an interlayer insulating film covering the storage capacitor element, and a pixel electrode formed on the interlayer insulating film. The storage capacitor element includes a storage capacitor line, an insulating film formed on the storage capacitor line, and two or more storage capacitor electrodes opposed to the storage capacitor line with the insulating film interposed therebetween. The two or more storage capacitor electrodes are electrically connected via associated contact holes formed in the interlayer insulating film to the pixel electrode and electrically continuous with a drain electrode of the TFT.