公开(公告)号：US12227830B2

公开(公告)日：2025-02-18

申请号：US17996718

申请日：2021-04-19

Applicant: TOSOH CORPORATION

Inventor： Yuya Tsuchida ,  Masami Mesuda ,  Hiroyuki Hara ,  Osamu Matsunaga

IPC: H01J37/34 ,  B22D7/00 ,  C23C14/18 ,  C23C14/34 ,  C23C14/58

Abstract: Provided is an yttrium ingot from which an yttrium sputtering target that produces a reduced number of particles can be obtained, and an yttrium sputtering target that has high plasma resistance and a low resistance that enables realization of a high film deposition rate can be obtained.
An yttrium ingot, wherein the yttrium ingot has a fluorine atom content of less than or equal to 10 wt %; in an instance where the yttrium ingot constitutes a target, a sputtering surface of the target has a surface roughness of 10 nm or greater and 2 μm or less; in the yttrium ingot, the number of pores having a diameter of greater than or equal to 100 μm is fewer than or equal to 0.1/cm2; and the yttrium ingot has a relative density of greater than or equal to 96%.