-
公开(公告)号：US20240319328A1
公开(公告)日：2024-09-26
申请号：US18598014
申请日：2024-03-07
发明人： Shunsuke AOYAMA , Keigo KONDO , Koji OKUMURA
摘要： A vehicle exterior component includes a cover, a housing, a flat substrate, a light emitter, and a lens. The cover and the housing are located frontward from a radar device in an electromagnetic wave transmission direction of the radar device. The radar device is installed in a vehicle. The flat substrate is arranged inside the housing. The light emitter is arranged on the substrate. The lens is arranged inside the housing. The housing extends over a surface of the cover facing the radar device. The light emitter emits light that illuminates an ornamental portion of the cover. The substrate is located outside an electromagnetic wave transmission range of the radar device. The lens reflects the light from the light emitter toward the ornamental portion.
-
公开(公告)号：US20230314558A1
公开(公告)日：2023-10-05
申请号：US18181995
申请日：2023-03-10
发明人： Shunsuke AOYAMA , Koji OKUMURA , Takeshi SUGIYAMA
IPC分类号： G01S7/02 , G01S13/931
CPC分类号： G01S7/028 , G01S13/931 , G01S2013/93271
摘要： A vehicle exterior component includes a cover, a housing, and a substrate. The cover is configured to arranged forward of a radar device in an emission direction of electromagnetic waves. The housing covers a rear surface of the cover. The substrate is arranged in the housing. The substrate includes a light emitting unit configured to emit visible light. The cover forms an angle in a range of 0° to 5° with respect to an orthogonal plane that is orthogonal to the emission direction. The rear wall of the housing faces the cover in the emission direction and forms an angle in a range of 2° to 10° with respect to the orthogonal plane.
-
3.发明申请GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREFOR 有权III类氮化物半导体发光器件及其制造方法公开(公告)号：US20130161586A1
公开(公告)日：2013-06-27
申请号：US13724385
申请日：2012-12-21
发明人： Koji OKUNO , Shunsuke AOYAMA
IPC分类号： H01L33/12
CPC分类号： H01L33/12 , H01L33/007 , H01L33/06 , H01L33/32
摘要： The present invention provides a Group III nitride semiconductor light-emitting device which is intended to relax stress applied to a light-emitting layer. The light-emitting device includes an MQW layer, and an n-side superlattice layer formed below the MQW layer. The n-side superlattice layer is formed by repeatedly depositing layer units, each unit including an InGaN layer, a GaN layer, and an n-GaN layer which are sequentially deposited from the side of the sapphire substrate. In the n-side superlattice layer, an InGaN layer more proximal to the MQW layer has a higher In compositional proportion. The In compositional proportion of the InGaN layer (which is most proximal to the MQW layer) of the n-side superlattice layer is 70% to 100% of the In compositional proportion of the InGaN layer (which is most proximal to the n-side superlattice layer) of the MQW layer.
摘要翻译： 本发明提供了旨在缓和施加到发光层的应力的III族氮化物半导体发光器件。 发光器件包括MQW层和形成在MQW层下面的n侧超晶格层。 n侧超晶格层通过重复地沉积层单元形成，每个单元包括从蓝宝石衬底侧依次沉积的InGaN层，GaN层和n-GaN层。 在n侧超晶格层中，更靠近MQW层的InGaN层具有较高的In组成比例。 n侧超晶格层的InGaN层（其最靠近MQW层）的In组成比例为InGaN层（其最靠近n侧）的In组成比例的70％至100％ 超晶格层）。
-
-
搜索结果
3 条记录 (耗时 0.026 秒)
