公开(公告)号：US10263071B2

公开(公告)日：2019-04-16

申请号：US15854072

申请日：2017-12-26

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Masakazu Okada ,  Yasushi Urakami ,  Yusuke Yamashita

IPC分类号： H01L21/00 ,  H01L21/16 ,  H01L29/06 ,  H01L29/423 ,  H01L29/78 ,  H01L29/16 ,  H01J37/317 ,  H01L29/739 ,  H01L29/66

摘要： A method of manufacturing a semiconductor device includes: forming a trench on a surface of a semiconductor substrate; forming an oxide film on side surfaces and a bottom surface of the trench; removing at least a part of the oxide film by dry etching from the bottom surface of the trench; and ion-implanting conductive impurities into the semiconductor substrate through the bottom surface of the trench after the dry etching. The dry etching is reactive ion etching in which etching gas including fluorocarbon based gas having a carbon atom ring structure, oxygen gas, and argon gas is used.

公开(公告)号：US09691870B2

公开(公告)日：2017-06-27

申请号：US14959944

申请日：2015-12-04

申请人： TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Takashi Ushijima ,  Tsuyoshi Nishiwaki ,  Masakazu Okada

IPC分类号： H01L23/52 ,  H01L29/45 ,  H01L29/417 ,  C22C21/00

CPC分类号： H01L29/456 ,  B22F1/0044 ,  C22C1/0416 ,  C22C21/003 ,  H01L29/417 ,  H01L29/7397

摘要： A semiconductor device including a semiconductor substrate and an electrode formed from an alloy containing aluminum, silicon and titanium. The silicon content in the electrode is from 0.5 to 1.0% by weight relative to the total weight of the electrode, the titanium content in the electrode is from 0.8 to 3.0% by weight relative to the total weight of the electrode, and the thickness of the electrode is at least 1 μm.

公开(公告)号：US20170053992A1

公开(公告)日：2017-02-23

申请号：US15238180

申请日：2016-08-16

申请人： Toyota Jidosha Kabushiki Kaisha

发明人： Masakazu Okada ,  Sachiko Aoi

IPC分类号： H01L29/423 ,  H01L29/51 ,  H01L21/311 ,  H01L21/02 ,  H01L21/04 ,  H01L21/28

CPC分类号： H01L29/4236 ,  H01L21/049 ,  H01L21/28238 ,  H01L21/3105 ,  H01L21/31111 ,  H01L21/762 ,  H01L21/764 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/42364 ,  H01L29/515 ,  H01L29/7813

摘要： A method of manufacturing a semiconductor device includes forming a cured portion by heating a semiconductor substrate in a non-oxidizing atmosphere to cure a front surface of a first insulation material that was not removed in a first-etching and remains in a deep side of the trench; forming a cavity in the trench on a deeper side of the cured portion by making an etchant enter into the trench from an interface to the deeper side to perform a second-etching and removing the first insulation material remaining in the deeper side of the cured portion, the interface being present between portions of the first insulation material that have been grown from side surfaces of the trench, wherein an opening is formed at the interface by the second-etching; and closing the opening at the interface with a second insulation material.

摘要翻译： 一种制造半导体器件的方法包括：通过在非氧化性气氛中加热半导体衬底来形成固化部分，以固化第一绝缘材料的前表面，该第一绝缘材料的前表面在第一蚀刻中未被去除并保留在 沟; 通过使蚀刻剂从界面进入深沟侧，在固化部分的较深侧的沟槽中形成空腔，进行第二蚀刻和去除残留在固化部分的较深侧的第一绝缘材料 所述界面存在于已经从所述沟槽的侧表面生长的所述第一绝缘材料的部分之间，其中通过所述第二蚀刻在所述界面处形成开口; 以及在所述界面处用第二绝缘材料封闭所述开口。