公开(公告)号：US08401344B2

公开(公告)日：2013-03-19

申请号：US12811565

申请日：2008-12-26

申请人： Tadao Ishibashi ,  Kazuhiro Maruyama ,  Kenji Kobayashi ,  Tomoyuki Akeyoshi ,  Nobuhiro Kikuchi ,  Ken Tsuzuki ,  Mitsuteru Ishikawa

发明人： Tadao Ishibashi ,  Kazuhiro Maruyama ,  Kenji Kobayashi ,  Tomoyuki Akeyoshi ,  Nobuhiro Kikuchi ,  Ken Tsuzuki ,  Mitsuteru Ishikawa

IPC分类号： G02F1/035

CPC分类号： G02F1/025 ,  G02F2201/07

摘要： A semiconductor optical modulator that includes a first semiconductor optical waveguide having a laminated structure including a core layer, a first clad layer, a second clad layer, and a barrier layer, the first clad layer and the second clad layer being disposed below and above the core layer, the barrier layer being inserted between the second clad layer and the core layer; a second semiconductor optical waveguide having a laminated structure in which the second clad layer has a p-type semiconductor penetrating locally through a n-type semiconductor in a laminated direction in the laminated structure of the first semiconductor optical waveguide; a first electrode connected to the first clad layer of the first semiconductor optical waveguide; and a second electrode electrically connecting the second clad layer of the first semiconductor optical waveguide and the p-type semiconductor of the second clad layer of the second semiconductor optical waveguide.

摘要翻译： 一种半导体光调制器，包括具有芯层，第一覆层，第二覆层和阻挡层的叠层结构的第一半导体光波导，第一覆层和第二覆层设置在第一半导体光波导的下方和上方 所述阻挡层插入在所述第二覆盖层和所述芯层之间; 具有层叠结构的第二半导体光波导，其中所述第二包层具有在所述第一半导体光波导的层叠结构中在层叠方向上局部穿透n型半导体的p型半导体; 连接到第一半导体光波导的第一包层的第一电极; 以及第二电极，电连接第一半导体光波导的第二包层和第二半导体光波导的第二包层的p型半导体。

公开(公告)号：US08031984B2

公开(公告)日：2011-10-04

申请号：US12445616

申请日：2007-10-24

申请人： Tadao Ishibashi ,  Nobuhiro Kikuchi ,  Ken Tsuzuki

发明人： Tadao Ishibashi ,  Nobuhiro Kikuchi ,  Ken Tsuzuki

IPC分类号： G02F1/025

CPC分类号： G02F1/017 ,  B82Y20/00 ,  G02F1/025 ,  G02F2202/101

摘要： The present invention can provide an npin-type optical modulator that has a high withstand voltage and is easily fabricated. A semiconductor optical amplifier (10) according to an embodiment of the present invention is an npin-type semiconductor optical modulator in which layers are sequentially stacked, with a cathode layer (12-1) arranged on the substrate side, including at least a first n-type cladding layer (13-1), a p-type cladding layer (14), a core layer (17) and a second n-type cladding layer (13-2). In this semiconductor optical modulator, the p-type cladding layer (14) is electrically connected to an electrode (18-1) of the cathode layer. Accordingly, the accumulation of holes in the p-type cladding layer associated with light absorption in the npin-type optical modulator can be absorbed in the electrode on the negative side. This npin-type semiconductor optical modulator can be comparatively easily fabricated using conventional semiconductor manufacturing techniques by adopting a mesa type waveguide structure.

摘要翻译： 本发明可以提供一种耐压高且易于制造的npin型光调制器。 根据本发明的实施例的半导体光放大器（10）是其中依次堆叠层的衬底型半导体光调制器，其中布置在衬底侧上的阴极层（12-1）包括至少第一 n型包覆层（13-1），p型包覆层（14），芯层（17）和第二n型包覆层（13-2）。 在该半导体光调制器中，p型覆层（14）与阴极层的电极（18-1）电连接。 因此，能够在负极侧的电极中吸收与npin型光调制器中的光吸收有关的p型覆层的空穴积聚。 通过采用台面型波导结构，可以使用常规的半导体制造技术相对容易地制造该npin型半导体光调制器。

公开(公告)号：US20100296769A1

公开(公告)日：2010-11-25

申请号：US12811565

申请日：2008-12-26

申请人： Tadao Ishibashi ,  Kazuhiro Maruyama ,  Kenji Kobayashi ,  Tomoyuki Akeyoshi ,  Nobuhiro Kikuchi ,  Ken Tsuzuki ,  Mitsuteru Ishikawa

发明人： Tadao Ishibashi ,  Kazuhiro Maruyama ,  Kenji Kobayashi ,  Tomoyuki Akeyoshi ,  Nobuhiro Kikuchi ,  Ken Tsuzuki ,  Mitsuteru Ishikawa

IPC分类号： G02F1/035

CPC分类号： G02F1/025 ,  G02F2201/07

摘要： A semiconductor optical modulator that includes a first semiconductor optical waveguide having a laminated structure including a core layer, a first clad layer, a second clad layer, and a barrier layer, the first clad layer and the second clad layer being disposed below and above the core layer, the barrier layer being inserted between the second clad layer and the core layer; a second semiconductor optical waveguide having a laminated structure in which the second clad layer has a p-type semiconductor penetrating locally through a n-type semiconductor in a laminated direction in the laminated structure of the first semiconductor optical waveguide; a first electrode connected to the first clad layer of the first semiconductor optical waveguide; and a second electrode electrically connecting the second clad layer of the first semiconductor optical waveguide and the p-type semiconductor of the second clad layer of the second semiconductor optical waveguide.

摘要翻译： 一种半导体光调制器，包括具有芯层，第一覆层，第二覆层和阻挡层的叠层结构的第一半导体光波导，第一覆层和第二覆层设置在第一半导体光波导的下方和上方 所述阻挡层插入在所述第二覆盖层和所述芯层之间; 具有层叠结构的第二半导体光波导，其中所述第二包层具有在所述第一半导体光波导的层叠结构中在层叠方向上局部穿透n型半导体的p型半导体; 连接到第一半导体光波导的第一包层的第一电极; 以及第二电极，电连接第一半导体光波导的第二包层和第二半导体光波导的第二包层的p型半导体。

公开(公告)号：US20100296766A1

公开(公告)日：2010-11-25

申请号：US12445616

申请日：2007-10-24

申请人： Tadao Ishibashi ,  Nobuhiro Kikuchi ,  Ken Tsuzuki

发明人： Tadao Ishibashi ,  Nobuhiro Kikuchi ,  Ken Tsuzuki

IPC分类号： G02F1/025

CPC分类号： G02F1/017 ,  B82Y20/00 ,  G02F1/025 ,  G02F2202/101

摘要： The present invention can provide an npin-type optical modulator that has a high withstand voltage and is easily fabricated. A semiconductor optical amplifier (10) according to an embodiment of the present invention is an npin-type semiconductor optical modulator in which layers are sequentially stacked, with a cathode layer (12-1) arranged on the substrate side, including at least a first n-type cladding layer (13-1), a p-type cladding layer (14), a core layer (17) and a second n-type cladding layer (13-2). In this semiconductor optical modulator, the p-type cladding layer (14) is electrically connected to an electrode (18-1) of the cathode layer. Accordingly, the accumulation of holes in the p-type cladding layer associated with light absorption in the npin-type optical modulator can be absorbed in the electrode on the negative side. This npin-type semiconductor optical modulator can be comparatively easily fabricated using conventional semiconductor manufacturing techniques by adopting a mesa type waveguide structure.

摘要翻译： 本发明可以提供一种耐压高且易于制造的npin型光调制器。 根据本发明的实施例的半导体光放大器（10）是其中依次堆叠层的衬底型半导体光调制器，其中布置在衬底侧上的阴极层（12-1）包括至少第一 n型包覆层（13-1），p型包覆层（14），芯层（17）和第二n型包覆层（13-2）。 在该半导体光调制器中，p型覆层（14）与阴极层的电极（18-1）电连接。 因此，能够在负极侧的电极中吸收与npin型光调制器中的光吸收有关的p型覆层的空穴积聚。 通过采用台面型波导结构，可以使用常规的半导体制造技术相对容易地制造该npin型半导体光调制器。

公开(公告)号：US07787736B2

公开(公告)日：2010-08-31

申请号：US12219061

申请日：2008-07-15

申请人： Tadao Ishibashi ,  Seigo Ando ,  Ken Tsuzuki

发明人： Tadao Ishibashi ,  Seigo Ando ,  Ken Tsuzuki

IPC分类号： G02B6/10

CPC分类号： G02F1/01708 ,  B82Y20/00

摘要： The present invention relates to a semiconductor optoelectronic waveguide having a nin-type hetero structure which is able to stably operate an optical modulator. On the upper and lower surfaces of the core layer determined for the structure so that electro-optical effects are effectively exerted at an operating light wavelength and are provided with intermediate clad layers having a band gap which is greater than that of the core layer 11. Respectively on the upper and the lower surface of the intermediate clad layer are provided the clad layers having the band gap which is greater than those of the intermediate clad layers. On the upper surface of the clad layer are sequentially laminated a p-type layer and an n-type layer. In the applied voltage range used under an operating state, a whole region of the p-type layer and a part or a whole region of the n-type layer are depleted.

摘要翻译： 本发明涉及能够稳定地操作光调制器的具有n型异质结构的半导体光电波导。 在对于结构确定的芯层的上表面和下表面上，使得电光效应在工作光波长下有效地施加，并且设置有具有比芯层11的带隙大的带隙的中间包层。 在中间包层的上表面和下表面上分别设置具有大于中间包层的带隙的包覆层。 在包覆层的上表面依次层叠p型层和n型层。 在工作状态下使用的施加电压范围内，p型层的整个区域和n型层的一部分或全部区域耗尽。

公开(公告)号：US20080304786A1

公开(公告)日：2008-12-11

申请号：US12219061

申请日：2008-07-15

申请人： Tadao Ishibashi ,  Seigo Ando ,  Ken Tsuzuki

发明人： Tadao Ishibashi ,  Seigo Ando ,  Ken Tsuzuki

IPC分类号： G02F1/035

CPC分类号： G02F1/01708 ,  B82Y20/00

摘要： The present invention relates to a semiconductor optoelectronic waveguide having a nin-type hetero structure which is able to stably operate an optical modulator. On the upper and lower surfaces of the core layer determined for the structure so that electro-optical effects are effectively exerted at an operating light wavelength and are provided with intermediate clad layers having a band gap which is greater than that of the core layer 11. Respectively on the upper and the lower surface of the intermediate clad layer are provided the clad layers having the band gap which is greater than those of the intermediate clad layers. On the upper surface of the clad layer are sequentially laminated a p-type layer and an n-type layer. In the applied voltage range used under an operating state, a whole region of the p-type layer and a part or a whole region of the n-type layer are depleted.

摘要翻译： 本发明涉及能够稳定地操作光调制器的具有n型异质结构的半导体光电波导。 在对于结构确定的芯层的上表面和下表面上，使得电光效应在工作光波长下有效地施加，并且设置有具有比芯层11的带隙大的带隙的中间包层。 在中间包层的上表面和下表面上分别设置具有大于中间包层的带隙的包覆层。 在包覆层的上表面依次层叠p型层和n型层。 在工作状态下使用的施加电压范围内，p型层的整个区域和n型层的一部分或全部区域耗尽。

公开(公告)号：US07599595B2

公开(公告)日：2009-10-06

申请号：US10574513

申请日：2004-10-04

申请人： Tadao Ishibashi ,  Seigo Ando ,  Ken Tsuzuki

发明人： Tadao Ishibashi ,  Seigo Ando ,  Ken Tsuzuki

IPC分类号： G02B6/10

CPC分类号： G02F1/01708 ,  B82Y20/00

摘要： The present invention relates to a semiconductor optoelectronic waveguide having a nin-type hetero structure which is able to stably operate an optical modulator. On the upper and lower surfaces of the core layer determined for the structure so that electro-optical effects are effectively exerted at an operating light wavelength and are provided with intermediate clad layers having a band gap which is greater than that of the core layer 11. Respectively on the upper and the lower surface of the intermediate clad layer are provided the clad layers having the band gap which is greater than those of the intermediate clad layers. On the upper surface of the clad layer are sequentially laminated a p-type layer and an n-type layer. In the applied voltage range used under an operating state, a whole region of the p-type layer and a part or a whole region of the n-type layer are depleted.

摘要翻译： 本发明涉及能够稳定地操作光调制器的具有n型异质结构的半导体光电波导。 在对于结构确定的芯层的上表面和下表面上，使得电光效应在工作光波长下有效地施加，并且设置有具有比芯层11的带隙大的带隙的中间包层。 在中间包层的上表面和下表面上分别设置具有大于中间包层的带隙的包覆层。 在包覆层的上表面依次层叠p型层和n型层。 在工作状态下使用的施加电压范围内，p型层的整个区域和n型层的一部分或全部区域耗尽。

公开(公告)号：US20090034904A1

公开(公告)日：2009-02-05

申请号：US11817312

申请日：2006-03-08

申请人： Ken Tsuzuki ,  Nobuhiro Kikuchi ,  Eiichi Yamada

发明人： Ken Tsuzuki ,  Nobuhiro Kikuchi ,  Eiichi Yamada

IPC分类号： G02B6/12 ,  H01L31/0264

CPC分类号： G02F1/025 ,  G02F2201/07 ,  G02F2202/102

摘要： There is provided a semiconductor optical modulator capable of performing a stable operation and having an excellent voltage-current characteristic to an electric field while exhibiting the characteristic of a semiconductor optical modulator with an n-i-n structure. The semiconductor optical modulator includes a waveguide structure that is formed by sequentially growing an n-type InP clad layer (11), a semiconductor core layer (13) having an electro-optic effect, a p-InAlAs layer (15), and an n-type InP clad layer (16). An electron affinity of the p-InAlAs layer (15) is smaller than an electron affinity of the n-type InP clad layer (16). In the waveguide structure having such a configuration, a non-dope InP clad layer (12) and a non-dope InP clad layer (14) may be respectively provided between the n-type InP clad layer (11) and the semiconductor core layer (13), and between the semiconductor core layer (13) and the p-InAlAs layer (15).

摘要翻译： 提供了一种能够执行稳定操作并且具有优异的电场电压特性的半导体光调制器，同时具有n-i-n结构的半导体光调制器的特性。 半导体光调制器包括通过依次生长n型InP包覆层（11），具有电光效应的半导体芯层（13），p-InAlAs层（15）和 n型InP覆层（16）。 p-InAlAs层（15）的电子亲和力小于n型InP包覆层（16）的电子亲和力。 在具有这种结构的波导结构中，非掺杂InP覆盖层（12）和非掺杂InP覆盖层（14）可以分别设置在n型InP覆盖层（11）和半导体芯层 （13），以及半导体芯层（13）和p-InAlAs层（15）之间。

公开(公告)号：US07711214B2

公开(公告)日：2010-05-04

申请号：US11817312

申请日：2006-03-08

申请人： Ken Tsuzuki ,  Nobuhiro Kikuchi ,  Eiichi Yamada

发明人： Ken Tsuzuki ,  Nobuhiro Kikuchi ,  Eiichi Yamada

IPC分类号： G02F1/035

CPC分类号： G02F1/025 ,  G02F2201/07 ,  G02F2202/102

摘要： There is provided a semiconductor optical modulator capable of performing a stable operation and having an excellent voltage-current characteristic to an electric field while exhibiting the characteristic of a semiconductor optical modulator with an n-i-n structure. The semiconductor optical modulator includes a waveguide structure that is formed by sequentially growing an n-type InP clad layer (11), a semiconductor core layer (13) having an electro-optic effect, a p-InAlAs layer (15), and an n-type InP clad layer (16). An electron affinity of the p-InAlAs layer (15) is smaller than an electron affinity of the n-type InP clad layer (16). In the waveguide structure having such a configuration, a non-dope InP clad layer (12) and a non-dope InP clad layer (14) may be respectively provided between the n-type InP clad layer (11) and the semiconductor core layer (13), and between the semiconductor core layer (13) and the p-InAlAs layer (15).

摘要翻译： 提供了一种能够执行稳定操作并且具有优异的电场电压特性的半导体光调制器，同时具有n-i-n结构的半导体光调制器的特性。 半导体光调制器包括通过依次生长n型InP包覆层（11），具有电光效应的半导体芯层（13），p-InAlAs层（15）和 n型InP覆层（16）。 p-InAlAs层（15）的电子亲和力小于n型InP包覆层（16）的电子亲和力。 在具有这种结构的波导结构中，非掺杂InP覆盖层（12）和非掺杂InP覆盖层（14）可以分别设置在n型InP覆盖层（11）和半导体芯层 （13），以及半导体芯层（13）和p-InAlAs层（15）之间。

公开(公告)号：US09036958B2

公开(公告)日：2015-05-19

申请号：US13582954

申请日：2011-03-09

申请人： Motohaya Ishii ,  Naoki Ooba ,  Kazunori Seno ,  Yoshiyuki Doi ,  Ken Tsuzuki ,  Takao Fukumitsu ,  Atsushi Murasawa ,  Fumihiro Ebisawa ,  Hiroshi Terui ,  Tomoyo Shibazaki ,  Yuichi Kikuchi

发明人： Motohaya Ishii ,  Naoki Ooba ,  Kazunori Seno ,  Yoshiyuki Doi ,  Ken Tsuzuki ,  Takao Fukumitsu ,  Atsushi Murasawa ,  Fumihiro Ebisawa ,  Hiroshi Terui ,  Tomoyo Shibazaki ,  Yuichi Kikuchi

IPC分类号： G02B6/12 ,  G02B6/36 ,  G02B6/30 ,  G02B6/35

CPC分类号： G02B6/12009 ,  G02B6/12033 ,  G02B6/30 ,  G02B6/3508 ,  G02B6/3616

摘要： In an optical component, a part of a waveguide type optical device is fixed to a convex portion of a mount. The optical component includes an optical device support base, a pressure member and a pressure support base. The optical device support base is interposed between the mount and the presser member enough to be slidable in a direction parallel to surfaces of the mount and the presser member.

摘要翻译： 在光学部件中，波导型光学元件的一部分固定在基座的凸部。 光学部件包括光学器件支撑基座，压力部件和压力支撑基座。 光学装置支撑基座插入在支架和压紧构件之间，足以在平行于安装件和压紧构件的表面的方向上滑动。