公开(公告)号：US20120007222A1

公开(公告)日：2012-01-12

申请号：US13241429

申请日：2011-09-23

申请人： Tadashi MISUMI ,  Kimimori HAMADA

发明人： Tadashi MISUMI ,  Kimimori HAMADA

IPC分类号： H01L27/08

CPC分类号： H01L29/861 ,  H01L29/36 ,  H01L29/66136 ,  H01L29/868

摘要： The present specification provides a method of efficiently manufacturing diodes in which recovery surge voltage is hardly generated.The method manufactures a diode including a high concentration n-type semiconductor layer, a medium concentration n-type semiconductor layer formed on the high concentration n-type semiconductor layer, a low concentration n-type semiconductor layer formed on the medium concentration n-type semiconductor layer, and a p-type semiconductor layer formed on the low concentration n-type semiconductor layer. This manufacturing method includes growing the low concentration n-type semiconductor layer on an n-type semiconductor substrate by epitaxial growth, wherein a concentration of n-type impurities in the low concentration n-type semiconductor layer is lower than that in the n-type semiconductor substrate, and forming the high concentration n-type semiconductor layer by injecting n-type impurities to a lower surface of the n-type semiconductor substrate.

摘要翻译： 本说明书提供了一种有效地制造难以产生回收浪涌电压的二极管的方法。 该方法制造二极管，其包括高浓度n型半导体层，形成在高浓度n型半导体层上的中等浓度n型半导体层，形成在介质浓度n型半导体层上的低浓度n型半导体层 半导体层和形成在低浓度n型半导体层上的p型半导体层。 该制造方法包括通过外延生长在n型半导体衬底上生长低浓度n型半导体层，其中低浓度n型半导体层中的n型杂质的浓度低于n型半导体层中的n型杂质浓度 并且通过向n型半导体衬底的下表面注入n型杂质形成高浓度n型半导体层。

公开(公告)号：US20110140243A1

公开(公告)日：2011-06-16

申请号：US12967373

申请日：2010-12-14

申请人： Tadashi MISUMI ,  Shinya IWASAKI ,  Takahide SUGIYAMA

发明人： Tadashi MISUMI ,  Shinya IWASAKI ,  Takahide SUGIYAMA

IPC分类号： H01L29/30 ,  H01L21/322

CPC分类号： H01L21/02238 ,  H01L21/263 ,  H01L21/26506 ,  H01L29/32 ,  H01L29/6609 ,  H01L29/861 ,  H01L29/868 ,  Y10S438/92

摘要： A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.

摘要翻译： 半导体器件包括半导体衬底，形成在半导体衬底的第一主表面上的第一电极和形成在半导体衬底的第二主表面上的第二电极。 半导体衬底包括其中氧空位缺陷的密度大于空位簇缺陷的密度的第一区域和空位簇缺陷的密度大于氧空位缺陷的密度的第二区域。

公开(公告)号：US20130134521A1

公开(公告)日：2013-05-30

申请号：US13687349

申请日：2012-11-28

申请人： Tadashi MISUMI

发明人： Tadashi MISUMI

IPC分类号： H01L27/088

CPC分类号： H01L27/088 ,  H01L23/36 ,  H01L29/1095 ,  H01L29/4236 ,  H01L29/42368 ,  H01L29/7397 ,  H01L29/7813 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device is equipped with an element region, an electrode, a thermal conduction portion, and a protective membrane. The element region is equipped with a plurality of gate electrodes. The electrode is formed on a surface of the element region. The thermal conduction portion is located on a surface side of a central portion of the electrode, and is higher in thermal conductivity than the element region. The protective membrane is formed on a peripheral portion that is located on the surface side of the electrode and surrounds a periphery of the central portion. In the element region, an emitter central region that is formed on a back side of the central portion of the electrode remains on for a longer time than an emitter peripheral region that is formed on a back side of the peripheral portion of the electrode.

摘要翻译： 半导体器件配备有元件区域，电极，导热部分和保护膜。 元件区域配备有多个栅电极。 电极形成在元件区域的表面上。 导热部位于电极的中央部的表面侧，导热性高于元件区域。 保护膜形成在位于电极的表面侧并围绕中心部分的周边的周边部分上。 在元件区域中，形成在电极的中心部分的背侧上的发射极中心区域比形成在电极的周边部分的背面上的发射极周边区域保持更长的时间。