公开(公告)号：US20080050852A1

公开(公告)日：2008-02-28

申请号：US11839358

申请日：2007-08-15

申请人： Tae-Hyung Hwang ,  Ivan Nikulin ,  Hyung-Il Jeon ,  Sang-II Kim ,  Nam-Seok Roh

发明人： Tae-Hyung Hwang ,  Ivan Nikulin ,  Hyung-Il Jeon ,  Sang-II Kim ,  Nam-Seok Roh

IPC分类号： H01L21/441 ,  H01L33/00

CPC分类号： H01L27/127 ,  G02F1/1368 ,  H01L27/1214 ,  H01L27/1218 ,  H01L29/78603

摘要： A manufacturing method of a display panel for an LCD includes forming a gate line on a flexible insulation substrate, depositing a gate insulating layer on the gate line, forming a semiconductor layer on the gate insulating layer and forming a data line and a drain electrode on the semiconductor layer and the gate insulating layer. The forming the semiconductor layer may be performed by PECVD at about 100° C. to about 180° C., the gate insulating layer may have a thickness of about 2000 Å to about 5500. The method may further include performing hydrogen plasma treatment on the gate insulating layer after the depositing the gate insulating layer and annealing the substrate having the plurality of thin films after the forming the data line and the drain electrode. The insulation substrate may include PES.

摘要翻译： 一种用于LCD的显示面板的制造方法，包括在柔性绝缘基板上形成栅极线，在栅极线上淀积栅极绝缘层，在栅极绝缘层上形成半导体层，并形成数据线和漏极 半导体层和栅极绝缘层。 形成半导体层可以通过PECVD在约100℃至约180℃下进行，栅极绝缘层的厚度可以为约2000至约5500.该方法还可以包括对其进行氢等离子体处理 在沉积栅绝缘层之后，在形成数据线和漏电极之后退火具有多个薄膜的衬底。 绝缘基板可以包括PES。

公开(公告)号：US07803650B2

公开(公告)日：2010-09-28

申请号：US12202090

申请日：2008-08-29

申请人： Tae-Hyung Hwang ,  Hyung-Il Jeon ,  Ivan Nikulin

发明人： Tae-Hyung Hwang ,  Hyung-Il Jeon ,  Ivan Nikulin

IPC分类号： H01L21/00

CPC分类号： H01L27/14601 ,  H01L27/1214

摘要： A sensor thin film transistor includes a gate electrode, a gate insulation layer formed on the gate electrode, a semiconductor layer having a portion positioned above the gate electrode and on a side of the gate insulation layer opposite the gate electrode, and a source electrode and drain electrode having spaced apart ends positioned on the semiconductor layer, wherein the sensor thin film transistor is operative such that a signal-to-noise ratio is equal to or greater than about 200 when the gate-off voltage applied to the gate electrode is equal to or less than about 0V.

摘要翻译： 传感器薄膜晶体管包括栅电极，形成在栅电极上的栅绝缘层，具有位于栅电极上方的部分和栅极绝缘层与栅电极相对的一侧的半导体层，以及源极和 漏电极具有位于半导体层上的间隔开的端部，其中传感器薄膜晶体管的操作使得当施加到栅电极的栅极截止电压相等时，信噪比等于或大于约200 至或小于约0V。