公开(公告)号：US20050024148A1

公开(公告)日：2005-02-03

申请号：US10899470

申请日：2004-07-26

申请人： Tae-Jin Kim ,  Seung-Wook Lee ,  Byoung-Soo Kim ,  Yong-Woo Kim ,  Young-Woong Kim ,  Jin-Ho Shin

发明人： Tae-Jin Kim ,  Seung-Wook Lee ,  Byoung-Soo Kim ,  Yong-Woo Kim ,  Young-Woong Kim ,  Jin-Ho Shin

IPC分类号： H04B1/40 ,  H03F1/02 ,  H03F1/30 ,  H03F3/04

CPC分类号： H03F1/025 ,  H03F1/302

摘要： A bias circuit for a smart power amplifier includes a high power mode bias circuit and a low power mode bias circuit, and operates only one of the bias circuits selectively using a switching circuit according to an input signal. Therefore, the bias circuit of high power mode and the bias circuit of the low power mode are divided and can be optimized according to characteristics of the power. Accordingly, a gain difference with respect to each power can be minimized and the low power mode can be controlled with a small amount of current in a state of initial current with a low power and in a middle power, such that an efficiency of the power amplifier can be improved at low power.

摘要翻译： 用于智能功率放大器的偏置电路包括高功率模式偏置电路和低功率模式偏置电路，并且仅使用根据输入信号的开关电路来选择性地操作一个偏置电路。 因此，高功率模式的偏置电路和低功耗模式的偏置电路被划分，可以根据电源的特性进行优化。 因此，可以将每个功率的增益差最小化，并且可以在低功率和中功率的初始电流的状态下以少量的电流来控制低功率模式，使得功率的效率 放大器可以在低功耗下进行改进。

公开(公告)号：US07129786B2

公开(公告)日：2006-10-31

申请号：US10899470

申请日：2004-07-26

申请人： Tae-Jin Kim ,  Seung-Wook Lee ,  Byoung-Soo Kim ,  Yong-Woo Kim ,  Young-Woong Kim ,  Jin-Ho Shin

发明人： Tae-Jin Kim ,  Seung-Wook Lee ,  Byoung-Soo Kim ,  Yong-Woo Kim ,  Young-Woong Kim ,  Jin-Ho Shin

IPC分类号： H03F3/04

CPC分类号： H03F1/025 ,  H03F1/302

摘要： A bias circuit for a smart power amplifier includes a high power mode bias circuit and a low power mode bias circuit, and operates only one of the bias circuits selectively using a switching circuit according to an input signal. Therefore, the bias circuit of high power mode and the bias circuit of the low power mode are divided and can be optimized according to characteristics of the power. Accordingly, a gain difference with respect to each power can be minimized and the low power mode can be controlled with a small amount of current in a state of initial current with a low power and in a middle power, such that an efficiency of the power amplifier can be improved at low power.

摘要翻译： 用于智能功率放大器的偏置电路包括高功率模式偏置电路和低功率模式偏置电路，并且仅使用根据输入信号的开关电路来选择性地操作一个偏置电路。 因此，高功率模式的偏置电路和低功耗模式的偏置电路被划分，并可以根据电源的特性进行优化。 因此，可以将每个功率的增益差最小化，并且可以在低功率和中功率的初始电流的状态下以少量的电流来控制低功率模式，使得功率的效率 放大器可以在低功耗下进行改进。

公开(公告)号：US20090191042A1

公开(公告)日：2009-07-30

申请号：US12350705

申请日：2009-01-08

申请人： Jun-Sig Park ,  Jung-Hyeon Kim ,  Jin-Ho Shin ,  Gennady Ivanov

发明人： Jun-Sig Park ,  Jung-Hyeon Kim ,  Jin-Ho Shin ,  Gennady Ivanov

IPC分类号： H01L21/677 ,  C23C16/458 ,  H01L21/30

CPC分类号： C23C16/4583 ,  H01L21/67109 ,  H01L21/67383 ,  Y10S414/136 ,  Y10S414/141

摘要： A semiconductor manufacturing apparatus and a wafer loading/unloading method thereof increase productivity. The semiconductor manufacturing apparatus includes a first boat and a second boat having a plurality of first slots and a plurality of second slots, respectively, and disposed such that the first slots and the second slots alternate each other, the first boat mounting a plurality of first wafers in the first slots to direct front faces of the first wafers in a predetermined direction, the second boat mounting a plurality of second wafers in the second slots to direct back faces of the second wafers in the predetermined direction; a reaction tube having an opening and containing the first and second boats mounting the first and second wafers; a plate sealing up the opening of the reaction tube containing the first boat and the second boat; a reaction gas supplier supplying reaction gas into the sealed reaction tube for a predetermined process; and a reaction gas exhauster exhausting the reaction gas from the reaction tube to the external of the reaction tube after the predetermined process.

摘要翻译： 半导体制造装置及其晶片装载/卸载方法提高了生产率。 半导体制造装置包括分别具有多个第一槽和多个第二槽的第一船和第二船，并且被布置成使得第一槽和第二槽彼此交替，第一船安装多个第一槽 在所述第一槽中的晶片在预定方向上引导所述第一晶片的前表面，所述第二船在所述第二槽中安装多个第二晶片以沿所述预定方向引导所述第二晶片的背面; 反应管，其具有开口并且容纳安装所述第一和第二晶片的所述第一和第二船; 密封包含第一船和第二船的反应管的开口的板; 将反应气体供给到密封反应管中以进行预定处理的反应气体供给装置; 以及反应气体排出器，其在预定处理之后将反应气体从反应管排出到反应管的外部。

公开(公告)号：US08221045B2

公开(公告)日：2012-07-17

申请号：US12350705

申请日：2009-01-08

申请人： Jun-Sig Park ,  Jung-Hyeon Kim ,  Jin-Ho Shin ,  Gennady Ivanov

发明人： Jun-Sig Park ,  Jung-Hyeon Kim ,  Jin-Ho Shin ,  Gennady Ivanov

IPC分类号： H01L21/677

CPC分类号： C23C16/4583 ,  H01L21/67109 ,  H01L21/67383 ,  Y10S414/136 ,  Y10S414/141

摘要： A semiconductor manufacturing apparatus and a wafer loading/unloading method thereof increase productivity. The semiconductor manufacturing apparatus includes a first boat and a second boat having a plurality of first slots and a plurality of second slots, respectively, and disposed such that the first slots and the second slots alternate each other, the first boat mounting a plurality of first wafers in the first slots to direct front faces of the first wafers in a predetermined direction, the second boat mounting a plurality of second wafers in the second slots to direct back faces of the second wafers in the predetermined direction; a reaction tube having an opening and containing the first and second boats mounting the first and second wafers; a plate sealing up the opening of the reaction tube containing the first boat and the second boat; a reaction gas supplier supplying reaction gas into the sealed reaction tube for a predetermined process; and a reaction gas exhauster exhausting the reaction gas from the reaction tube to the external of the reaction tube after the predetermined process.

摘要翻译： 半导体制造装置及其晶片装载/卸载方法提高了生产率。 半导体制造装置包括分别具有多个第一槽和多个第二槽的第一船和第二船，并且被布置成使得第一槽和第二槽彼此交替，第一船安装多个第一槽 在第一槽中的晶片以预定方向引导第一晶片的前表面，第二船在第二槽中安装多个第二晶片，以沿预定方向引导第二晶片的后表面; 反应管，其具有开口并且容纳安装所述第一和第二晶片的所述第一和第二船; 密封包含第一船和第二船的反应管的开口的板; 将反应气体供给到密封反应管中以进行预定处理的反应气体供给装置; 以及反应气体排出器，其在预定处理之后将反应气体从反应管排出到反应管的外部。

公开(公告)号：US5777864A

公开(公告)日：1998-07-07

申请号：US745706

申请日：1996-11-12

申请人： Hwan-Ho Seong ,  Jin-Ho Shin

发明人： Hwan-Ho Seong ,  Jin-Ho Shin

IPC分类号： H02M3/10 ,  H02M7/06 ,  H02M7/12 ,  H02M7/48 ,  H02M7/537 ,  H02M7/538 ,  H02M3/24

CPC分类号： H02M7/53803 ,  Y02B70/1441

摘要： A resonant convertor control system regulates a resonant AC current based on the amount of input power consumed by the system. The switching frequency and resonant AC current are limited by a phase difference assurance circuit that compares the phase of a drive signal with the phase of the resonant AC current. By detecting the phase of the resonant current instead of the resonant voltage, it eliminates the need for the costly components required to detect the resonant voltage. The system includes a main power supply for supplying a DC power signal and an inverter that converts the DC power signal to a resonating AC current signal responsive to a drive signal from a drive stage. An input current controller receives a first sense signal that indicates the power consumed by the main power supply and generates a first control signal that regulates the power consumed by the load. A phase difference assurance circuit generates a second control signal responsive to phase difference between the resonant AC current signal and the drive signal. The second control signal adjusts the frequency signal responsive to the second control signal, thereby assuring a phase difference between the second sense signal and the drive signal and eliminating excessive current flow in the inverter.

摘要翻译： 谐振转换器控制系统基于系统消耗的输入功率量来调节谐振AC电流。 开关频率和谐振交流电流受相位差保证电路的限制，该电路将驱动信号的相位与谐振AC电流的相位进行比较。 通过检测谐振电流的相位而不是谐振电压，它消除了对检测谐振电压所需的昂贵部件的需要。 该系统包括用于提供DC电力信号的主电源和响应于来自驱动级的驱动信号将DC电力信号转换为谐振AC电流信号的逆变器。 输入电流控制器接收指示主电源消耗的功率的第一感测信号，并产生调节负载消耗的功率的第一控制信号。 相位差保证电路响应谐振AC电流信号与驱动信号之间的相位差产生第二控制信号。 第二控制信号响应于第二控制信号调节频率信号，从而确保第二感测信号和驱动信号之间的相位差，并消除逆变器中的过大电流。