公开(公告)号：US5155412A

公开(公告)日：1992-10-13

申请号：US706035

申请日：1991-05-28

申请人： Tai-Hon P. Chang ,  Dieter P. Kern ,  Lawrence P. Muray

发明人： Tai-Hon P. Chang ,  Dieter P. Kern ,  Lawrence P. Muray

IPC分类号： G01Q60/10 ,  H01J3/02

CPC分类号： B82Y15/00 ,  H01J3/021

摘要： The present invention is directed to a method for selectively scaling the dimensions of a field emission electron gun. The electron gun includes a field emission tip followed by a dual electrode immersion lens. The lens consists of two planar electrodes separated by a dielectric layer. A well defined circular hole is present at the center of each electrode and the dielectric layer. A high scaling factor is applied to the region consisting of the first electrode and the emission tip, reducing the first electrode thickness and bore diameter and the distance between the tip and first electrode to the micrometer range. A weaker scaling factor is applied to the bore diameter of the second electrode and the spacing between the electrodes such that the second electrode bore diameter and distance between the electrodes are approximately equal and are greater than the first electrode thickness and bore diameter and the distance between the tip and first electrode.

摘要翻译： 本发明涉及一种用于选择性地缩放场致发射电子枪尺寸的方法。 电子枪包括场发射尖端，后面是双电极浸没透镜。 该透镜由两层由电介质层隔开的平面电极组成。 在每个电极和电介质层的中心存在明确的圆形孔。 将高比例因子应用于由第一电极和发射尖端组成的区域，将第一电极厚度和孔直径以及尖端和第一电极之间的距离减小到微米范围。 将较小的比例因子应用于第二电极的孔径和电极之间的间隔，使得第二电极孔直径和电极之间的距离近似相等并且大于第一电极厚度和孔直径以及第二电极之间的距离 尖端和第一电极。

公开(公告)号：US4426583A

公开(公告)日：1984-01-17

申请号：US376350

申请日：1982-05-10

申请人： Tai-Hon P. Chang ,  Phillip J. Coane ,  Fritz-Jurgen Hohn ,  Dieter P. Kern

发明人： Tai-Hon P. Chang ,  Phillip J. Coane ,  Fritz-Jurgen Hohn ,  Dieter P. Kern

IPC分类号： H01J37/06 ,  G01R31/02 ,  G01R31/302 ,  H01J37/04 ,  H01J37/28 ,  H01J37/30 ,  H01L21/66 ,  H05K3/00 ,  H01J3/14

CPC分类号： H01J37/04 ,  H01J37/3007

摘要： The electron potential of an electron beam is switched between different values without moving the focal plane by effectively changing the axial position of the electron source at the same time that the electron potential is changed. The effective change in axial position of the electron source exactly compensates for the altered effectiveness which magnetic lenses have upon an electron beam of altered electron potential such that the final focal plane remains at the same position without adjusting the field strength of any magnetic lens.

摘要翻译： 电子束的电子电位在不同值之间切换，而不会通过在电子电位改变的同时有效地改变电子源的轴向位置来移动焦平面。 电子源的轴向位置的有效变化精确地补偿了磁透镜对电子电位变化的电子束的有效性的改变，使得最终焦平面保持在相同的位置，而不调整任何磁性透镜的场强。

公开(公告)号：US5051598A

公开(公告)日：1991-09-24

申请号：US580979

申请日：1990-09-12

申请人： Christopher J. Ashton ,  Porter D. Gerber ,  Dieter P. Kern ,  Walter W. Molzen, Jr. ,  Stephen A. Rishton ,  Michael G. Rosenfield ,  Raman G. Viswanathan

发明人： Christopher J. Ashton ,  Porter D. Gerber ,  Dieter P. Kern ,  Walter W. Molzen, Jr. ,  Stephen A. Rishton ,  Michael G. Rosenfield ,  Raman G. Viswanathan

IPC分类号： H01L21/30 ,  H01J37/302 ,  H01L21/027

CPC分类号： H01J37/3026

摘要： A proximity effect correction method for electron beam lithography suitable for high voltages and/or very dense patterns applies both backscatter and forward scatter dose corrections. Backscatter dose corrections are determined by computing two matrices, a "Proximity Matrix" P and a "Fractional Density Matrix" F. The Proximity Matrix P is computed using known algorithms. The elements of the Fractional Density Matrix are the fractional shape coverage in a mesh of square cells which is superimposed on a pattern of interest. Then, a Dose Correction Matrix D is computed by convolving the P and F matrices. The final backscatter dose corrections are assigned to each shape either as area-weighted averages of the D matrix elements for all cells spanned by the shape, or by polynomial or other interpolation of the dose correction field defined by the D matrix. The D matrix also provides a basis for automatic shape fracturing for optimal proximity correction. Optionally, forward scattering correction may be included in the correction process. Forward scattering correction consists of boosting the dose applied to shape i by a factor b.sub.i. These boost factors are computed in a separate and independent step which considers only forward scattering. They are combined with those resulting from the backscatter correction scheme either by simple multiplication to form the final correction factors, or by inputting them to the backscatter correction scheme as numerical weights for each shape.