公开(公告)号：US10861989B2

公开(公告)日：2020-12-08

申请号：US16682278

申请日：2019-11-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Chi Wu ,  Chien Nan Tu ,  Kun-Yu Lin ,  Shih-Shiung Chen

IPC: H01L31/18 ,  H01L31/0236 ,  H01L31/028 ,  H01L27/146 ,  H01L31/109 ,  H01L31/0232

Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.

公开(公告)号：US10861988B2

公开(公告)日：2020-12-08

申请号：US16682245

申请日：2019-11-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Chi Wu ,  Chien Nan Tu ,  Kun-Yu Lin ,  Shih-Shiung Chen

IPC: H01L27/146 ,  H01L31/0236 ,  H01L31/028 ,  H01L31/18 ,  H01L31/109 ,  H01L31/0232

Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.

公开(公告)号：US11342372B2

公开(公告)日：2022-05-24

申请号：US16924538

申请日：2020-07-09

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Fang ,  Ming-Chi Wu ,  Ji-Heng Jiang ,  Chi-Yuan Wen ,  Chien-Nan Tu ,  Yu-Lung Yeh ,  Shih-Shiung Chen ,  Kun-Yu Lin

IPC: H01L31/0232 ,  H01L27/146

Abstract: An image sensor device is provided. The image sensor device includes a semiconductor substrate having a first side, a second side opposite to the first side, and at least one light-sensing region close to the first side. The image sensor device includes a dielectric feature covering the second side and extending into the semiconductor substrate. The dielectric feature in the semiconductor substrate surrounds the light-sensing region. The image sensor device includes a reflective layer in the dielectric feature in the semiconductor substrate, wherein a top portion of the reflective layer protrudes away from the second side, and a top surface of the reflective layer and a top surface of the insulating layer are substantially coplanar.

公开(公告)号：US20200083389A1

公开(公告)日：2020-03-12

申请号：US16682245

申请日：2019-11-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Chi Wu ,  Chien Nan Tu ,  Kun-Yu Lin ,  Shih-Shiung Chen

IPC: H01L31/0236 ,  H01L31/109 ,  H01L27/146 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0232

Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.

公开(公告)号：US10510910B2

公开(公告)日：2019-12-17

申请号：US15877535

申请日：2018-01-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Chi Wu ,  Chien Nan Tu ,  Kun-Yu Lin ,  Shih-Shiung Chen

IPC: H01L31/028 ,  H01L31/0236 ,  H01L31/18 ,  H01L27/146 ,  H01L31/109

Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.

公开(公告)号：US11646232B2

公开(公告)日：2023-05-09

申请号：US17162868

申请日：2021-01-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kun-Yu Lin ,  Yu-Ling Ko ,  I-Chen Chen ,  Chih-Teng Liao ,  Yi-Jen Chen

IPC: H01L21/8234 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L21/823431 ,  H01L29/66795 ,  H01L29/785

Abstract: In a method of manufacturing a semiconductor device, sacrificial patterns are formed over a hard mask layer disposed over a substrate, sidewall patterns are formed on sidewalls of the sacrificial patterns, the sacrificial patterns are removed, thereby leaving the sidewall patterns as first hard mask patterns, the hard mask layer is patterned by using the first hard mask patters as an etching mask, thereby forming second hard mask patterns, and the substrate is patterned by using the second hard mask patterns as an etching mask, thereby forming fin structures. Each of the first sacrificial patterns has a tapered shape having a top smaller than a bottom.

公开(公告)号：US20220238572A1

公开(公告)日：2022-07-28

申请号：US17658704

申请日：2022-04-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd

Inventor： Ming-Chi Wu ,  Chun-Chieh Fang ,  Bo-Chang Su ,  Chien Nan Tu ,  Yu-Lung Yeh ,  Kun-Yu Lin ,  Shih-Shiung Chen

IPC: H01L27/146 ,  H01L21/762 ,  H01L21/3205

Abstract: A method includes etching a semiconductor substrate to form a trench, filling a dielectric layer into the trench, with a void being formed in the trench and between opposite portions of the dielectric layer, etching the dielectric layer to reveal the void, forming a diffusion barrier layer on the dielectric layer, and forming a high-reflectivity metal layer on the diffusion barrier layer. The high-reflectivity metal layer has a portion extending into the trench. A remaining portion of the void is enclosed by the high-reflectivity metal layer.

公开(公告)号：US10734427B2

公开(公告)日：2020-08-04

申请号：US16277375

申请日：2019-02-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Chieh Fang ,  Ming-Chi Wu ,  Ji-Heng Jiang ,  Chi-Yuan Wen ,  Chien-Nan Tu ,  Yu-Lung Yeh ,  Shih-Shiung Chen ,  Kun-Yu Lin

IPC: H01L31/0232 ,  H01L27/146

Abstract: A method for forming an image sensor device is provided. The method includes providing a semiconductor substrate including a front surface, a back surface opposite to the front surface, at least one light-sensing region close to the front surface, and a first trench surrounding the light-sensing region. The method includes forming an insulating layer over the back surface and in the first trench. A void is formed in the insulating layer in the first trench, and the void is closed. The method includes removing the insulating layer over the void to open up the void. The opened void forms a second trench partially in the first trench. The method includes filling a reflective structure in the second trench. The reflective structure has a light reflectivity ranging from about 70% to about 100%.

公开(公告)号：US20200083390A1

公开(公告)日：2020-03-12

申请号：US16682278

申请日：2019-11-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Chi Wu ,  Chien Nan Tu ,  Kun-Yu Lin ,  Shih-Shiung Chen

IPC: H01L31/0236 ,  H01L31/109 ,  H01L27/146 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0232

Abstract: An image sensor with an absorption enhancement semiconductor layer is provided. In some embodiments, the image sensor comprises a front-side semiconductor layer, an absorption enhancement semiconductor layer, and a back-side semiconductor layer that are stacked. The absorption enhancement semiconductor layer is stacked between the front-side and back-side semiconductor layers. The absorption enhancement semiconductor layer has an energy bandgap less than that of the front-side semiconductor layer. Further, the image sensor comprises a plurality of protrusions and a photodetector. The protrusions are defined by the back-side semiconductor layer, and the photodetector is defined by the front-side semiconductor layer, the absorption enhancement semiconductor layer, and the back-side semiconductor layer.

公开(公告)号：US20210366777A1

公开(公告)日：2021-11-25

申请号：US17162868

申请日：2021-01-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kun-Yu Lin ,  Yu-Ling KO ,  I-Chen CHEN ,  Chih-Teng LIAO ,  Yi-Jen CHEN

IPC: H01L21/8234 ,  H01L29/66 ,  H01L29/78

Abstract: In a method of manufacturing a semiconductor device, sacrificial patterns are formed over a hard mask layer disposed over a substrate, sidewall patterns are formed on sidewalls of the sacrificial patterns, the sacrificial patterns are removed, thereby leaving the sidewall patterns as first hard mask patterns, the hard mask layer is patterned by using the first hard mask patters as an etching mask, thereby forming second hard mask patterns, and the substrate is patterned by using the second hard mask patterns as an etching mask, thereby forming fin structures. Each of the first sacrificial patterns has a tapered shape having a top smaller than a bottom.