公开(公告)号：US20220359168A1

公开(公告)日：2022-11-10

申请号：US17874161

申请日：2022-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jr-Sheng CHEN ,  An-Chi LI ,  Shih-Che HUANG ,  Chih-Hsien HSU ,  Zhi-Hao HUANG ,  Alex WANG ,  Yu-Pei CHIANG ,  Chun Yan Chen

IPC: H01J37/32 ,  H01L21/67

Abstract: Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.

公开(公告)号：US20220359165A1

公开(公告)日：2022-11-10

申请号：US17874124

申请日：2022-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jr-Sheng CHEN ,  An-Chi LI ,  Shi-Che HUANG ,  Chih-Hsien HSU ,  Zhi-Hao HUANG ,  Ming Chih WANG ,  Yu-Pei CHIANG ,  Chun Yan CHEN

IPC: H01J37/32

Abstract: Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.