公开(公告)号：US20220359165A1

公开(公告)日：2022-11-10

申请号：US17874124

申请日：2022-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jr-Sheng CHEN ,  An-Chi LI ,  Shi-Che HUANG ,  Chih-Hsien HSU ,  Zhi-Hao HUANG ,  Ming Chih WANG ,  Yu-Pei CHIANG ,  Chun Yan CHEN

IPC: H01J37/32

Abstract: Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.

公开(公告)号：US20250121507A1

公开(公告)日：2025-04-17

申请号：US18486010

申请日：2023-10-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hsin-Kai HUANG ,  Kuei-Hsiung CHO ,  Fu-Kuo TSENG ,  Chun-Jen CHAN ,  Chun Yan CHEN

IPC: B25J15/00 ,  B25J11/00 ,  B25J13/08

Abstract: A cross-shape transfer blade is configured to, in operation, be mounted or coupled to an end of a transfer robot arm (TRA). The cross-shape robot or transfer blade includes a plurality of raised regions to contact a backside of a workpiece or thin workpiece such that the cross-shape transfer blade supports and transports the respective workpeice between various locations within a semiconductor manufacturing plant (FAB). The cross-shape transfer blade includes a first prong structure, a second prong structure, a first wing structure, and a second wing structure. Respective ones of the plurality of raised regions are at corresponding ones of the first prong structure, the second prong structure, the first wing structure, and the second wing structure minimizing contact between the backside of the workpiece or thin workpiece and the cross-shape transfer blade when the workpiece or thin workpiece is being transferred, transported, and supported by the cross-shape transfer blade.

公开(公告)号：US20240249906A1

公开(公告)日：2024-07-25

申请号：US18158357

申请日：2023-01-23

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Tang TSENG ,  Ching-Heng YEN ,  Tai-Kun KAO ,  Sheng-Tai PENG ,  Chun Yan CHEN

IPC: H01J37/08 ,  H01J37/317

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J2237/0815

Abstract: An ion source head includes a curved liner that is configured to more closely and accurately repel, direct, or deflect ion species generated within an ion source cavity of an ion source container of an ion source head towards an ion beam opening that extends through the ion source container of the ion source head. This prevents or reduces the ion species from becoming trapped in the ion source cavity instead of exiting the ion source cavity through the ion beam opening that extends through the ion source container of the ion source head. The curved liner may be received by a curved structure of the ion source container of the ion source head. The ion source head may be utilized within an implanter tool to refine or process a solid target with the ion beam generated by the ion source head with the curved liner.