公开(公告)号：US20190256350A1

公开(公告)日：2019-08-22

申请号：US16398091

申请日：2019-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Han MENG ,  Jr-Sheng CHEN ,  Chih-Hsien HSU ,  Yu-Pei CHIANG ,  Lin-Ching HUANG

IPC: B81C1/00

Abstract: Methods for manufacturing MEMS structures are provided. The method for manufacturing a microelectromechanical system (MEMS) structure includes etching a MEMS substrate to form a first trench and a second trench and etching the MEMS substrate through the first trench and the second trench to form a first through hole and an extended second trench. The method for manufacturing a MEMS structure further includes etching the MEMS substrate through the extended second trench to form a second through hole. In addition, a height of the first trench is greater than ¾ of a height of the MEMS substrate, and a height of the second trench is smaller than ⅔ of the height of the MEMS substrate.

公开(公告)号：US20190092625A1

公开(公告)日：2019-03-28

申请号：US15884919

申请日：2018-01-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Han MENG ,  Jr-Sheng CHEN ,  Chih-Hsien HSU ,  Yu-Pei CHIANG ,  Lin-Ching HUANG

IPC: B81C1/00

Abstract: Methods for manufacturing MEMS structures are provided. The method includes forming a first trench and a second trench in a MEMS substrate by performing a main etching process and etching the MEMS substrate through the first trench and the second trench to form a first through hole and an extended second trench by performing a first step of an over-etching process. The method further includes etching the MEMS substrate through the extended second trench to form a second through hole by performing a second step of the over-etching process. In addition, a width of the first trench is greater than a width of the second trench, and a height of the first trench is greater than ¾ of a height of the MEMS substrate, and a height of the second trench is smaller than ⅔ of the MEMS substrate.

公开(公告)号：US20220359168A1

公开(公告)日：2022-11-10

申请号：US17874161

申请日：2022-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jr-Sheng CHEN ,  An-Chi LI ,  Shih-Che HUANG ,  Chih-Hsien HSU ,  Zhi-Hao HUANG ,  Alex WANG ,  Yu-Pei CHIANG ,  Chun Yan Chen

IPC: H01J37/32 ,  H01L21/67

Abstract: Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.

公开(公告)号：US20220359165A1

公开(公告)日：2022-11-10

申请号：US17874124

申请日：2022-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jr-Sheng CHEN ,  An-Chi LI ,  Shi-Che HUANG ,  Chih-Hsien HSU ,  Zhi-Hao HUANG ,  Ming Chih WANG ,  Yu-Pei CHIANG ,  Chun Yan CHEN

IPC: H01J37/32

Abstract: Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.

公开(公告)号：US20200075294A1

公开(公告)日：2020-03-05

申请号：US16422071

申请日：2019-05-24

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jr-Sheng CHEN ,  An-Chi Li ,  Shih-Che Huang ,  Chih-Hsien Hsu ,  Zhi-Hao Huang ,  Alex Wang ,  Yu-Pei Chiang ,  Chen-Chun Yan

IPC: H01J37/32 ,  H01L21/67

Abstract: Devices and methods for controlling wafer uniformity using a gas baffle plate are disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a baffle plate arranged above a wafer in the process chamber. The baffle plate is configured to control plasma distribution on the wafer. The baffle plate has a shape of an annulus that comprises a first annulus sector and a second annulus sector. The first annulus sector has a first inner radius. The second annulus sector has a second inner radius that is different from the first inner radius.

公开(公告)号：US20200043705A1

公开(公告)日：2020-02-06

申请号：US16525330

申请日：2019-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jr-Sheng CHEN ,  An-Chi Li ,  Shih-Che Huang ,  Chih-Hsien Hsu ,  Zhi-Hao Huang ,  Alex Wang ,  Yu-Pei Chiang ,  Chen-Chun Yan

IPC: H01J37/32

Abstract: Devices and methods for controlling wafer uniformity in plasma-based process is disclosed. In one example, a device for plasma-based processes is disclosed. The device includes: a housing defining a process chamber and a gas distribution plate (GDP) arranged in the process chamber. The housing comprises: a gas inlet configured to receive a process gas, and a gas outlet configured to expel processed gas. The GDP is configured to distribute the process gas within the process chamber. The GDP has a plurality of holes evenly distributed thereon. The GDP comprises a first zone and a second zone. The first zone is closer to the gas outlet than the second zone. At least one hole in the first zone is closed.

公开(公告)号：US20180148324A1

公开(公告)日：2018-05-31

申请号：US15725752

申请日：2017-10-05

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chin-Han MENG ,  Chih-Hsien HSU ,  Chia-Chi CHUNG ,  Yu-Pei CHIANG ,  Wen-Chih CHEN ,  Chen-Huang HUANG ,  Zhi-Sheng XU ,  Jr-Sheng CHEN ,  Kuo-Chin LIU ,  Lin-Ching HUANG

IPC: B81C1/00 ,  H01H59/00 ,  H01G5/18 ,  B81B3/00

CPC classification number: B81C1/00182 ,  B81B3/0072 ,  B81C1/00158 ,  B81C1/00476 ,  B81C1/00523 ,  B81C2201/0159 ,  B81C2201/0198 ,  H01G5/18 ,  H01H59/0009

Abstract: A method for forming a micro-electro-mechanical system (MEMS) device structure is provided. The method includes forming a second substrate over a first substrate, and a cavity is formed between the first substrate and the second substrate. The method includes forming a hole through the second substrate using an etching process, and the hole is connected to the cavity. The etching process includes a plurality of etching cycles, and each of the etching cycles includes an etching step, and the etching step has a first stage and a second stage. The etching time of each of the etching steps during the second stage is gradually increased as the number of etching cycles is increased.