公开(公告)号：US20200243396A1

公开(公告)日：2020-07-30

申请号：US16853474

申请日：2020-04-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ta-Chun Lin ,  Buo-Chin Hsu ,  Kuo-Hua Pan ,  Jhon Jhy Liaw ,  Chih-Yung Lin

IPC: H01L21/8234 ,  H01L29/06 ,  H01L21/311 ,  H01L21/3105 ,  H01L29/66 ,  H01L27/088

Abstract: A semiconductor structure includes a fin active region extruded from a semiconductor substrate; and a gate stack disposed on the fin active region. The gate stack includes a gate dielectric layer and a gate electrode disposed on the gate dielectric layer. The gate dielectric layer includes a first dielectric material. The semiconductor structure further includes a dielectric gate of a second dielectric material disposed on the fin active region. The gate dielectric layer extends from a sidewall of the gate electrode to a sidewall of the dielectric gate. The second dielectric material is different from the first dielectric material in composition.

公开(公告)号：US20190333822A1

公开(公告)日：2019-10-31

申请号：US15964177

申请日：2018-04-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ta-Chun Lin ,  Buo-Chin Hsu ,  Kuo-Hua Pan ,  Jhon Jhy Liaw ,  Chih-Yung Lin

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/66 ,  H01L21/3105 ,  H01L21/311

Abstract: A semiconductor structure includes a fin active region extruded from a semiconductor substrate; and a gate stack disposed on the fin active region. The gate stack includes a gate dielectric layer and a gate electrode disposed on the gate dielectric layer. The gate dielectric layer includes a first dielectric material. The semiconductor structure further includes a dielectric gate of a second dielectric material disposed on the fin active region. The gate dielectric layer extends from a sidewall of the gate electrode to a sidewall of the dielectric gate. The second dielectric material is different from the first dielectric material in composition.

公开(公告)号：US11245034B2

公开(公告)日：2022-02-08

申请号：US15962181

申请日：2018-04-25

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Kuei-Ming Chang ,  Ta-Chun Lin ,  Rei-Jay Hsieh ,  Yung-Chih Wang ,  Wen-Huei Guo ,  Kuo-Hua Pan ,  Buo-Chin Hsu

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/762 ,  H01L29/417

Abstract: A semiconductor device includes a substrate, first and second source/drain features, and a dielectric plug. The substrate has a semiconductor fin. The first and second source/drain features are over first and second portions of the semiconductor fin, respectively. The dielectric plug is at least partially embedded in a third portion of the semiconductor fin. The third portion is in between the first and second portions of the semiconductor fin. The dielectric plug includes a first dielectric material and a second dielectric material different from the first dielectric material.

公开(公告)号：US20210272852A1

公开(公告)日：2021-09-02

申请号：US17246998

申请日：2021-05-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ta-Chun Lin ,  Buo-Chin Hsu ,  Kuo-Hua Pan ,  Jhon Jhy Liaw ,  Chih-Yung Lin

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L21/311 ,  H01L29/66 ,  H01L21/3105

Abstract: A structure includes a fin on a substrate; first and second gate stacks over the fin and including first and second gate dielectric layers and first and second gate electrodes respectively; and a dielectric gate over the fin and between the first and second gate stacks. The dielectric gate includes a dielectric material layer on a third gate dielectric layer. In a cross-sectional view cut along a direction parallel to a lengthwise direction of the fin and offset from the fin, the first gate dielectric layer forms a first U shape, the third gate dielectric layer forms a second U shape, a portion of the first gate electrode is disposed within the first U shape, a portion of the dielectric material layer is disposed within the second U shape, and a portion of an interlayer dielectric layer is disposed laterally between the first and the second U shapes.

公开(公告)号：US11791217B2

公开(公告)日：2023-10-17

申请号：US17246998

申请日：2021-05-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ta-Chun Lin ,  Buo-Chin Hsu ,  Kuo-Hua Pan ,  Jhon Jhy Liaw ,  Chih-Yung Lin

IPC: H01L21/82 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L21/311 ,  H01L29/66 ,  H01L21/3105

CPC classification number: H01L21/823462 ,  H01L21/31051 ,  H01L21/31105 ,  H01L21/823431 ,  H01L27/0886 ,  H01L29/0649 ,  H01L29/66545

Abstract: A structure includes a fin on a substrate; first and second gate stacks over the fin and including first and second gate dielectric layers and first and second gate electrodes respectively; and a dielectric gate over the fin and between the first and second gate stacks. The dielectric gate includes a dielectric material layer on a third gate dielectric layer. In a cross-sectional view cut along a direction parallel to a lengthwise direction of the fin and offset from the fin, the first gate dielectric layer forms a first U shape, the third gate dielectric layer forms a second U shape, a portion of the first gate electrode is disposed within the first U shape, a portion of the dielectric material layer is disposed within the second U shape, and a portion of an interlayer dielectric layer is disposed laterally between the first and the second U shapes.

公开(公告)号：US11037831B2

公开(公告)日：2021-06-15

申请号：US16737447

申请日：2020-01-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ta-Chun Lin ,  Buo-Chin Hsu ,  Kuo-Hua Pan ,  Jhon Jhy Liaw ,  Chih-Yung Lin

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L21/311 ,  H01L29/66 ,  H01L21/3105

Abstract: A semiconductor structure includes a fin active region extruded from a semiconductor substrate; and a gate stack disposed on the fin active region. The gate stack includes a gate dielectric layer and a gate electrode disposed on the gate dielectric layer. The gate dielectric layer includes a first dielectric material. The semiconductor structure further includes a dielectric gate of a second dielectric material disposed on the fin active region. The gate dielectric layer extends from a sidewall of the gate electrode to a sidewall of the dielectric gate. The second dielectric material is different from the first dielectric material in composition.

公开(公告)号：US10998237B2

公开(公告)日：2021-05-04

申请号：US16853474

申请日：2020-04-20

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ta-Chun Lin ,  Buo-Chin Hsu ,  Kuo-Hua Pan ,  Jhon Jhy Liaw ,  Chih-Yung Lin

IPC: H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L21/311 ,  H01L29/66 ,  H01L21/3105

Abstract: A semiconductor structure includes a fin active region extruded from a semiconductor substrate; and a gate stack disposed on the fin active region. The gate stack includes a gate dielectric layer and a gate electrode disposed on the gate dielectric layer. The gate dielectric layer includes a first dielectric material. The semiconductor structure further includes a dielectric gate of a second dielectric material disposed on the fin active region. The gate dielectric layer extends from a sidewall of the gate electrode to a sidewall of the dielectric gate. The second dielectric material is different from the first dielectric material in composition.