公开(公告)号：US20240389472A1

公开(公告)日：2024-11-21

申请号：US18786688

申请日：2024-07-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Lin Huang ,  MingYuan Song ,  Chien-Min Lee ,  Shy-Jay Lin ,  Chi-Feng Pai ,  Chen-Yu Hu ,  Chao-Chung Huang ,  Kuan-Hao Chen ,  Chia-Chin Tsai ,  Yu-Fang Chiu ,  Cheng-Wei Peng

IPC: H10N50/85 ,  C22C5/04 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N52/00 ,  H10N52/01 ,  H10N52/80

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5 d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3 d orbitals.

公开(公告)号：US12156479B2

公开(公告)日：2024-11-26

申请号：US17518789

申请日：2021-11-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Lin Huang ,  MingYuan Song ,  Chien-Min Lee ,  Shy-Jay Lin ,  Chi-Feng Pai ,  Chen-Yu Hu ,  Chao-Chung Huang ,  Kuan-Hao Chen ,  Chia-Chin Tsai ,  Yu-Fang Chiu ,  Cheng-Wei Peng

IPC: H10N50/85 ,  C22C5/04 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N52/00 ,  H10N52/01 ,  H10N52/80

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.

公开(公告)号：US20220216396A1

公开(公告)日：2022-07-07

申请号：US17518789

申请日：2021-11-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yen-Lin Huang ,  MingYuan Song ,  Chien-Min Lee ,  Shy-Jay Lin ,  Chi-Feng Pai ,  Chen-Yu Hu ,  Chao-Chung Huang ,  Kuan-Hao Chen ,  Chia-Chin Tsai ,  Yu-Fang Chiu ,  Cheng-Wei Peng

IPC: H01L43/10 ,  H01L27/22 ,  H01L43/04 ,  H01L43/06 ,  H01L43/14 ,  H01F10/32 ,  C22C5/04

Abstract: A memory device and a manufacturing method thereof are provided. The memory device includes a magnetic tunneling junction (MTJ) and a spin Hall electrode (SHE). The MTJ includes a free layer, a reference layer and a barrier layer lying between the free layer and the reference layer. The SHE is in contact with the MTJ, and configured to convert a charge current to a spin current for programming the MTJ. The SHE is formed of an alloy comprising at least one heavy metal element and at least one light transition metal element. The heavy metal element is selected from metal elements with one or more valence electrons filling in 5d orbitals, and the light transition metal element is selected from transition metal elements with one or more valence electrons partially filling in 3d orbitals.