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公开(公告)号:US20210111027A1
公开(公告)日:2021-04-15
申请号:US17128408
申请日:2020-12-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Po-Yu LIN , Chi-Yu CHOU , Hsien-Ming LEE , Huai-Tei YANG , Chun-Chieh WANG , Yueh-Ching PAI , Chi-Jen YANG , Tsung-Ta TANG , Yi-Ting WANG
IPC: H01L21/28 , H01L29/49 , H01L21/3213 , H01L21/285
Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.