公开(公告)号：US20210111027A1

公开(公告)日：2021-04-15

申请号：US17128408

申请日：2020-12-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yu LIN ,  Chi-Yu CHOU ,  Hsien-Ming LEE ,  Huai-Tei YANG ,  Chun-Chieh WANG ,  Yueh-Ching PAI ,  Chi-Jen YANG ,  Tsung-Ta TANG ,  Yi-Ting WANG

IPC: H01L21/28 ,  H01L29/49 ,  H01L21/3213 ,  H01L21/285

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.

公开(公告)号：US20230141521A1

公开(公告)日：2023-05-11

申请号：US18149129

申请日：2023-01-02

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Po-Yu LIN ,  Chi-Yu Chou ,  Hsien-Ming Lee ,  Huai-Tei Yang ,  Chun-Chieh Wang ,  Yueh-Ching Pai ,  Chi-Jen Yang ,  Tsung-Ta Tang ,  Yi-Ting Wang

IPC: H01L21/28 ,  H01L29/49 ,  H01L21/3213 ,  H01L21/285

CPC classification number: H01L21/28088 ,  H01L29/4966 ,  H01L21/32135 ,  H01L21/28556

Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.