公开(公告)号：US20210210534A1

公开(公告)日：2021-07-08

申请号：US16736134

申请日：2020-01-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Yuan Chen ,  Ching-Chun Wang ,  Hsiao-Hui Tseng ,  Jen-Cheng Liu ,  Jhy-Jyi Sze ,  Shyh-Fann Ting ,  Wei Chuang Wu ,  Yen-Ting Chiang ,  Chia Ching Liao ,  Yen-Yu Chen

IPC: H01L27/146

Abstract: In some embodiments, the present disclosure relates to a device having a semiconductor substrate including a frontside and a backside. On the frontside of the semiconductor substrate are a first source/drain region and a second source/drain region. A gate electrode is arranged on the frontside of the semiconductor substrate and includes a horizontal portion, a first vertical portion, and a second vertical portion. The horizontal portion is arranged over the frontside of the semiconductor substrate and between the first and second source/drain regions. The first vertical portion extends from the frontside towards the backside of the semiconductor substrate and contacts the horizontal portion of the gate electrode structure. The second vertical portion extends from the frontside towards the backside of the semiconductor substrate, contacts the horizontal portion of the gate electrode structure, and is separated from the first vertical portion by a channel region of the substrate.