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    Method of forming self aligned grids in BSI image sensor
    1.
    发明授权
    Method of forming self aligned grids in BSI image sensor 有权

    公开(公告)号：US11776985B2

    公开(公告)日：2023-10-03

    申请号：US17313140

    申请日：2021-05-06

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Tsun-Kai Tsao ,  Jiech-Fun Lu ,  Shih-Pei Chou ,  Wei Chuang Wu

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14685 ,  H01L27/1463 ,  H01L27/1464 ,  H01L27/14623

    摘要： A method of fabricating self-aligned grids in a BSI image sensor is provided. The method includes depositing a first dielectric layer over a back surface of a substrate that has a plurality of photodiodes formed therein, forming a grid of trenches, and filling in the trenches with dielectric material to create a trench isolation grid. Here, a trench passes through the first dielectric layer and extends into the substrate. The method further includes etching back dielectric material in the trenches to a level that is below an upper surface of the first dielectric layer to form recesses overlaying the trench isolation grid, and filling in the recesses with metallic material to create a metallic grid that is aligned with the trench isolation grid.

    METHOD OF FORMING SELF ALIGNED GRIDS IN BSI IMAGE SENSOR
    2.
    发明申请
    METHOD OF FORMING SELF ALIGNED GRIDS IN BSI IMAGE SENSOR 有权

    公开(公告)号：US20210280630A1

    公开(公告)日：2021-09-09

    申请号：US17313140

    申请日：2021-05-06

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Tsun-Kai Tsao ,  Jiech-Fun Lu ,  Shih-Pei Chou ,  Wei Chuang Wu

    IPC分类号： H01L27/146

    摘要： A method of fabricating self-aligned grids in a BSI image sensor is provided. The method includes depositing a first dielectric layer over a back surface of a substrate that has a plurality of photodiodes formed therein, forming a grid of trenches, and filling in the trenches with dielectric material to create a trench isolation grid. Here, a trench passes through the first dielectric layer and extends into the substrate. The method further includes etching back dielectric material in the trenches to a level that is below an upper surface of the first dielectric layer to form recesses overlaying the trench isolation grid, and filling in the recesses with metallic material to create a metallic grid that is aligned with the trench isolation grid.

    Image sensor with overlap of backside trench isolation structure and vertical transfer gate
    5.
    发明授权
    Image sensor with overlap of backside trench isolation structure and vertical transfer gate 有权

    公开(公告)号：US11437420B2

    公开(公告)日：2022-09-06

    申请号：US16733433

    申请日：2020-01-03

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Feng-Chi Hung ,  Dun-Nian Yaung ,  Jen-Cheng Liu ,  Wei Chuang Wu ,  Yen-Yu Chen ,  Chih-Kuan Yu

    IPC分类号： H01L27/146

    摘要： Some embodiments are directed towards an image sensor device. A photodetector is disposed in a semiconductor substrate, and a transfer transistor is disposed over photodetector. The transfer transistor includes a transfer gate having a lateral portion extending over a frontside of the semiconductor substrate and a vertical portion extending to a first depth below the frontside of the semiconductor substrate. A gate dielectric separates the lateral portion and the vertical portion from the semiconductor substrate. A backside trench isolation structure extends from a backside of the semiconductor substrate to a second depth below the frontside of the semiconductor substrate. The backside trench isolation structure laterally surrounds the photodetector, and the second depth is less than the first depth such that a lowermost portion of the vertical portion of the transfer transistor has a vertical overlap with an uppermost portion of the backside trench isolation structure.

    THROUGH-SUBSTRATE-VIA WITH REENTRANT PROFILE
    6.
    发明申请
    THROUGH-SUBSTRATE-VIA WITH REENTRANT PROFILE 有权

    公开(公告)号：US20220084908A1

    公开(公告)日：2022-03-17

    申请号：US17177660

    申请日：2021-02-17

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Hung-Ling Shih ,  Wei Chuang Wu ,  Shih Kuang Yang ,  Hsing-Chih Lin ,  Jen-Cheng Liu

    IPC分类号： H01L23/48 ,  H01L23/522 ,  H01L21/768 ,  H01L21/308

    摘要： The present disclosure relates an integrated chip. The integrated chip includes a semiconductor device arranged along a first side of a semiconductor substrate. The semiconductor substrate has one or more sidewalls extending from the first side of the semiconductor substrate to an opposing second side of the semiconductor substrate. A dielectric liner lines the one or more sidewalls of the semiconductor substrate. A through-substrate-via (TSV) is arranged between the one or more sidewalls and is separated from the semiconductor substrate by the dielectric liner. The TSV has a first width at a first distance from the second side and a second width at a second distance from the second side. The first width is smaller than the second width and the first distance is smaller than the second distance

    Multiple deep trench isolation (MDTI) structure for CMOS image sensor
    9.
    发明授权
    Multiple deep trench isolation (MDTI) structure for CMOS image sensor 有权

    公开(公告)号：US11495630B2

    公开(公告)日：2022-11-08

    申请号：US16924579

    申请日：2020-07-09

    申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

    发明人： Wei Chuang Wu ,  Ching-Chun Wang ,  Dun-Nian Yaung ,  Feng-Chi Hung ,  Jen-Cheng Liu ,  Yen-Ting Chiang ,  Chun-Yuan Chen ,  Shen-Hui Hong

    IPC分类号： H01L27/146 ,  H04N5/374 ,  H04N5/369

    摘要： The present disclosure relates to a CMOS image sensor having a multiple deep trench isolation (MDTI) structure, and an associated method of formation. In some embodiments, the image sensor comprises a plurality of pixel regions disposed within a substrate and respectively comprising a photodiode configured to receive radiation that enters the substrate from a back-side. A boundary deep trench isolation (BDTI) structure is disposed at boundary regions of the pixel regions surrounding the photodiode. The BDTI structure extends from the back-side of the substrate to a first depth within the substrate. A multiple deep trench isolation (MDTI) structure is disposed at inner regions of the pixel regions overlying the photodiode. The MDTI structure extends from the back-side of the substrate to a second depth within the substrate smaller than the first depth. The MDTI structure is a continuous integral unit having a ring shape.