公开(公告)号：US20200058465A1

公开(公告)日：2020-02-20

申请号：US16539513

申请日：2019-08-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yi-Hsiung LIN ,  Cheng-En LEE ,  Chia-Lin OU ,  Hsuan-Pang LIU ,  Yao-Jen YEH

IPC: H01J37/317 ,  H01J37/30 ,  H01J37/08

Abstract: The present disclosure relates to a method includes generating ions with an ion source of an ion implantation apparatus based on an ion implantation recipe. The method includes accelerating the generated ions based on an ion energy setting in the ion implantation recipe and determining an energy spectrum of the accelerated ions. The method also includes analyzing a relationship between the determined energy spectrum and the ion energy setting. The method further includes adjusting at least one parameter of a final energy magnet (FEM) of the ion implantation apparatus based on the analyzed relationship.

公开(公告)号：US20200043700A1

公开(公告)日：2020-02-06

申请号：US16525071

申请日：2019-07-29

Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.

Inventor： Yi-Hsiung LIN ,  Yao-Jen YEH ,  Chia-Lin OU ,  Cheng-En LEE ,  Hsuan-Pang LIU

IPC: H01J37/317 ,  H01L21/265 ,  H01L21/67

Abstract: A method of tuning an ion implantation apparatus is disclosed. The method includes operations of applying any wafer acceptance test (WAT) recipe to a test sample, calculating a recipe for a direct current (DC) final energy magnet (FEM), calculating a real energy of the DC FEM, verifying the tool energy shift, and obtaining a peak spectrum of the DC FEM.