公开(公告)号：US11937426B2

公开(公告)日：2024-03-19

申请号：US17246987

申请日：2021-05-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Feng-Ching Chu ,  Feng-Cheng Yang ,  Katherine H. Chiang ,  Chung-Te Lin ,  Chieh-Fang Chen

IPC: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10

CPC classification number: H10B43/27 ,  H10B41/10 ,  H10B41/27 ,  H10B43/10

Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.

公开(公告)号：US20220223618A1

公开(公告)日：2022-07-14

申请号：US17246987

申请日：2021-05-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Feng-Ching Chu ,  Feng-Cheng Yang ,  Katherine H. Chiang ,  Chung-Te Lin ,  Chieh-Fang Chen

IPC: H01L27/11582 ,  H01L27/11556 ,  H01L27/11519 ,  H01L27/11565

Abstract: The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.