公开(公告)号：US11094655B2

公开(公告)日：2021-08-17

申请号：US16439957

申请日：2019-06-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wen-Hsiung Lu ,  Chang-Jung Hsueh ,  Chin-Wei Kang ,  Hui-Min Huang ,  Wei-Hung Lin ,  Cheng-Jen Lin ,  Ming-Da Cheng ,  Chien-Chun Wang

IPC: H01L21/768 ,  H01L23/528 ,  H01L23/00 ,  H01L21/683

Abstract: A method for forming a semiconductor structure is provided. The method includes forming a seed layer over a substrate and forming a first mask layer over the seed layer. The method also includes forming a first trench and a second trench in the first mask layer and forming a first conductive material in the first trench and the second trench. The method further includes forming a second mask layer in the first trench and over the first conductive material, and forming a second conductive material in the second trench and on the first conductive material. A first conductive connector is formed in the first trench with a first height, a second conductive connector is formed in the second trench with a second height, and the second height is greater than the first height.