公开(公告)号：US20250046667A1

公开(公告)日：2025-02-06

申请号：US18482217

申请日：2023-10-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Chieh Hsiao ,  Ke-Gang Wen ,  Chih-Pin Chiu ,  Hsin-Feng Chen ,  Yu-Bey Wu ,  Liang-Wei Wang ,  Dian-Hau Chen

IPC: H01L23/367 ,  H01L23/00 ,  H01L25/065

Abstract: A method includes forming a device die including forming integrated circuits on a semiconductor substrate; and forming a thermally conductive pillar extending into the semiconductor substrate. A cooling medium is attached over and contacting the semiconductor substrate to form a package, wherein the cooling medium is thermally coupled to the thermally conductive pillar.

公开(公告)号：US20240355766A1

公开(公告)日：2024-10-24

申请号：US18448407

申请日：2023-08-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chih-Pin Chiu ,  Yu-Bey Wu ,  Dian-Hau Chen

IPC: H01L23/00 ,  H01L23/485

CPC classification number: H01L24/06 ,  H01L23/485 ,  H01L24/03 ,  H01L2224/03005 ,  H01L2224/06102

Abstract: A first bond pad of a first device and a second bond pad of a second device are implanted with metal ions. The first and second semiconductor device are bonded together using a direct metal-to-metal bond and an overlay offset occurs between the bond pads such that a portion of the first bond pad and a portion of the second bond pad overlaps and contacts a dielectric material layer. During the bonding process, however, diffusion of the metal ions provides a barrier layer at the interface of the bond pads and the dielectric layers.