公开(公告)号：US11830700B2

公开(公告)日：2023-11-28

申请号：US17693103

申请日：2022-03-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Heng Yen ,  Jen-Chung Chiu ,  Tai-Kun Kao ,  Lu-Hsun Lin ,  Tsung-Min Lin

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/32

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J37/32541

Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.

公开(公告)号：US12243707B2

公开(公告)日：2025-03-04

申请号：US18448026

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Heng Yen ,  Jen-Chung Chiu ,  Tai-Kun Kao ,  Lu-Hsun Lin ,  Tsung-Min Lin

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/32

Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.

公开(公告)号：US11295926B2

公开(公告)日：2022-04-05

申请号：US16698072

申请日：2019-11-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Heng Yen ,  Jen-Chung Chiu ,  Tai-Kun Kao ,  Lu-Hsun Lin ,  Tsung-Min Lin

IPC: H01J37/08 ,  H01J37/32 ,  H01J37/317

Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.