公开(公告)号：US11295926B2

公开(公告)日：2022-04-05

申请号：US16698072

申请日：2019-11-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Heng Yen ,  Jen-Chung Chiu ,  Tai-Kun Kao ,  Lu-Hsun Lin ,  Tsung-Min Lin

IPC: H01J37/08 ,  H01J37/32 ,  H01J37/317

Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.

公开(公告)号：US12243707B2

公开(公告)日：2025-03-04

申请号：US18448026

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Heng Yen ,  Jen-Chung Chiu ,  Tai-Kun Kao ,  Lu-Hsun Lin ,  Tsung-Min Lin

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/32

Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.

公开(公告)号：US10319557B2

公开(公告)日：2019-06-11

申请号：US15692745

申请日：2017-08-31

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Kun Kao ,  Tsung-Min Lin ,  Jen-Chung Chiu ,  Ren-Dou Lee

IPC: H01J37/08 ,  H01J37/317 ,  C01F17/00

Abstract: Ion generators for ion implanters are provided. The ion generator for an ion implanter includes an ion source arc chamber including an arc chamber housing and a thermal electron emitter coupled to the arc chamber housing. In addition, the thermal electron emitter includes a filament and a cathode, and the cathode has a solid top portion made of a work function modified conductive material including tungsten (W) and a work function modification metal.

公开(公告)号：US11830700B2

公开(公告)日：2023-11-28

申请号：US17693103

申请日：2022-03-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ching-Heng Yen ,  Jen-Chung Chiu ,  Tai-Kun Kao ,  Lu-Hsun Lin ,  Tsung-Min Lin

IPC: H01J37/08 ,  H01J37/317 ,  H01J37/32

CPC classification number: H01J37/08 ,  H01J37/3171 ,  H01J37/32541

Abstract: The current disclosure is directed to a repellent electrode used in a source arc chamber of an ion implanter. The repellent electrode includes a shaft and a repellent body having a repellent surface. The repellent surface has a surface shape that substantially fits the shape of the inner chamber space of the source arc chamber where the repellent body is positioned. A gap between the edge of the repellent body and the inner sidewall of the source arc chamber is minimized to a threshold level that is maintained to avoid a short between the conductive repellent body and the conductive inner sidewall of the source arc chamber.

公开(公告)号：US09741537B1

公开(公告)日：2017-08-22

申请号：US15342582

申请日：2016-11-03

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tai-Kun Kao ,  Tsung-Min Lin ,  Jen-Chung Chiu

IPC: H01J37/08 ,  H01J37/30 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/3171 ,  H01J37/08 ,  H01J2237/006 ,  H01L21/26513

Abstract: A method for generating an ion beam in an ion implantation process is provided. The method includes supplying a working gas into a first portion of an arc chamber which is separated from a second portion of the arc chamber by an intermediate plate. The method further includes guiding the working gas into the second portion of the arc chamber via a plurality of gas outlets formed at two opposite edges of the intermediate plate. The method also includes generating an ion beam from the working gas in the second portion of the arc chamber.