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公开(公告)号：US10961118B2
公开(公告)日：2021-03-30
申请号：US16584752
申请日：2019-09-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Chia Lee , Chin-Min Lin , Cheng San Chou , Hsiang-Fu Chen , Wen-Chuan Tai , Ching-Kai Shen , Hua-Shu Ivan Wu , Fan Hu
Abstract: The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. In some embodiments, a ventilation trench and an isolation trench are concurrently within a capping substrate. The isolation trench isolates a silicon region and has a height substantially equal to a height of the ventilation trench. A sealing structure is formed within the ventilation trench and the isolation trench, the sealing structure filing the isolation trench and defining a vent within the ventilation trench. A device substrate is provided and bonded to the capping substrate at a first gas pressure and hermetically sealing a first cavity associated with a first MEMS device and a second cavity associated with a second MEMS device. The capping substrate is thinned to open the vent to adjust a gas pressure of the second cavity.
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公开(公告)号：US20190161346A1
公开(公告)日：2019-05-30
申请号：US15823969
申请日：2017-11-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Chia Lee , Chin-Min Lin , Cheng San Chou , Hsiang-Fu Chen , Wen-Chuan Tai , Ching-Kai Shen , Hua-Shu Ivan Wu , Fan Hu
Abstract: The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. A device substrate comprising first and second MEMS devices is bonded to a capping substrate comprising first and second recessed regions. A ventilation trench is laterally spaced apart from the recessed regions and within the second cavity. A sealing structure is arranged within the ventilation trench and defines a vent in fluid communication with the second cavity. A cap is arranged within the vent to seal the second cavity at a second gas pressure that is different than a first gas pressure of the first cavity.
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公开(公告)号：US20210327852A1
公开(公告)日：2021-10-21
申请号：US16851114
申请日：2020-04-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Chuan Teng , Victor Chiang Liang , Jung-Kuo Tu , Ching-Kai Shen
IPC: H01L25/065 , H01L21/768 , H01L23/522 , H01L23/48 , H01L23/00 , H01L25/00
Abstract: A semiconductor device includes a first integrated circuit and a second integrated circuit. The first integrated circuit includes a semiconductor substrate and a dielectric layer disposed on a top surface of the semiconductor substrate. The second integrated circuit is disposed on the dielectric layer of the first integrated circuit and includes a dummy opening extending through the second integrated circuit and having a metal layer covering the inner walls of the dummy opening and in contact with the dielectric layer, wherein the metal layer is electrically grounded or electrically floating.
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Patent Agency Ranking
公开(公告)号：US20200024136A1
公开(公告)日：2020-01-23
申请号：US16584719
申请日：2019-09-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Chia Lee , Chin-Min Lin , Cheng San Chou , Hsiang-Fu Chen , Wen-Chuan Tai , Ching-Kai Shen , Hua-Shu Ivan Wu , Fan Hu
Abstract: The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. A device substrate comprising first and second MEMS devices is bonded to a capping substrate comprising first and second recessed regions. A ventilation trench is laterally spaced apart from the recessed regions and within the second cavity. A sealing structure is arranged within the ventilation trench and defines a vent in fluid communication with the second cavity. A cap is arranged within the vent to seal the second cavity at a second gas pressure that is different than a first gas pressure of the first cavity.
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公开(公告)号：US11276670B2
公开(公告)日：2022-03-15
申请号：US16851114
申请日：2020-04-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Chuan Teng , Victor Chiang Liang , Jung-Kuo Tu , Ching-Kai Shen
IPC: H01L21/00 , H01L25/065 , H01L21/768 , H01L23/522 , H01L23/00 , H01L25/00 , H01L23/48
Abstract: A semiconductor device includes a first integrated circuit and a second integrated circuit. The first integrated circuit includes a semiconductor substrate and a dielectric layer disposed on a top surface of the semiconductor substrate. The second integrated circuit is disposed on the dielectric layer of the first integrated circuit and includes a dummy opening extending through the second integrated circuit and having a metal layer covering the inner walls of the dummy opening and in contact with the dielectric layer, wherein the metal layer is electrically grounded or electrically floating.
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公开(公告)号：US20200024137A1
公开(公告)日：2020-01-23
申请号：US16584752
申请日：2019-09-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Chia Lee , Chin-Min Lin , Cheng San Chou , Hsiang-Fu Chen , Wen-Chuan Tai , Ching-Kai Shen , Hua-Shu Ivan Wu , Fan Hu
Abstract: The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. In some embodiments, a ventilation trench and an isolation trench are concurrently within a capping substrate. The isolation trench isolates a silicon region and has a height substantially equal to a height of the ventilation trench. A sealing structure is formed within the ventilation trench and the isolation trench, the sealing structure filing the isolation trench and defining a vent within the ventilation trench. A device substrate is provided and bonded to the capping substrate at a first gas pressure and hermetically sealing a first cavity associated with a first MEMS device and a second cavity associated with a second MEMS device. The capping substrate is thinned to open the vent to adjust a gas pressure of the second cavity.
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公开(公告)号：US10899608B2
公开(公告)日：2021-01-26
申请号：US16584719
申请日：2019-09-26
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Chia Lee , Chin-Min Lin , Cheng San Chou , Hsiang-Fu Chen , Wen-Chuan Tai , Ching-Kai Shen , Hua-Shu Ivan Wu , Fan Hu
Abstract: The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. A device substrate comprising first and second MEMS devices is bonded to a capping substrate comprising first and second recessed regions. A ventilation trench is laterally spaced apart from the recessed regions and within the second cavity. A sealing structure is arranged within the ventilation trench and defines a vent in fluid communication with the second cavity. A cap is arranged within the vent to seal the second cavity at a second gas pressure that is different than a first gas pressure of the first cavity.
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公开(公告)号：US10556792B2
公开(公告)日：2020-02-11
申请号：US15823969
申请日：2017-11-28
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Yi-Chia Lee , Chin-Min Lin , Cheng San Chou , Hsiang-Fu Chen , Wen-Chuan Tai , Ching-Kai Shen , Hua-Shu Ivan Wu , Fan Hu
Abstract: The present disclosure relates to a micro-electro mechanical system (MEMS) package and a method of achieving differential pressure adjustment in multiple MEMS cavities at a wafer-to-wafer bonding level. A device substrate comprising first and second MEMS devices is bonded to a capping substrate comprising first and second recessed regions. A ventilation trench is laterally spaced apart from the recessed regions and within the second cavity. A sealing structure is arranged within the ventilation trench and defines a vent in fluid communication with the second cavity. A cap is arranged within the vent to seal the second cavity at a second gas pressure that is different than a first gas pressure of the first cavity.
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