公开(公告)号：US20210391251A1

公开(公告)日：2021-12-16

申请号：US16900567

申请日：2020-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung Hsun Lin ,  Che-Chih Hsu ,  Wen-Chu Huang ,  Chinyu Su ,  Yen-Yu Chen ,  Wei-Chun Hua ,  Wen Han Hung

IPC: H01L23/522 ,  H01L23/66 ,  H01L23/64 ,  H01L21/768 ,  H01L49/02

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

公开(公告)号：US12199033B2

公开(公告)日：2025-01-14

申请号：US18180079

申请日：2023-03-07

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung Hsun Lin ,  Wei-Chun Hua ,  Wen-Chu Huang ,  Yen-Yu Chen ,  Che-Chih Hsu ,  Chinyu Su ,  Wen Han Hung

IPC: H01L23/52 ,  H01L21/027 ,  H01L21/768 ,  H01L23/522 ,  H01L23/64 ,  H01L23/66 ,  H01L49/02

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

公开(公告)号：US11616013B2

公开(公告)日：2023-03-28

申请号：US16900567

申请日：2020-06-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung Hsun Lin ,  Che-Chih Hsu ,  Wen-Chu Huang ,  Chinyu Su ,  Yen-Yu Chen ,  Wei-Chun Hua ,  Wen Han Hung

IPC: H01L23/52 ,  H01L23/522 ,  H01L23/66 ,  H01L49/02 ,  H01L21/768 ,  H01L23/64

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

公开(公告)号：US12087627B2

公开(公告)日：2024-09-10

申请号：US17870213

申请日：2022-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung Hsun Lin ,  Che-Chih Hsu ,  Wen-Chu Huang ,  Chinyu Su ,  Yen-Yu Chen ,  Wei-Chun Hua ,  Wen Han Hung

IPC: H01L21/76 ,  H01L21/027 ,  H01L21/768 ,  H01L23/522 ,  H01L23/64 ,  H01L23/66 ,  H01L49/02

CPC classification number: H01L21/76877 ,  H01L21/0276 ,  H01L21/76802 ,  H01L23/5226 ,  H01L23/5227 ,  H01L23/645 ,  H01L23/66 ,  H01L28/10

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.

公开(公告)号：US20220367343A1

公开(公告)日：2022-11-17

申请号：US17870213

申请日：2022-07-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Hung Hsun Lin ,  Che-Chih Hsu ,  Wen-Chu Huang ,  Chinyu Su ,  Yen-Yu Chen ,  Wei-Chun Hua ,  Wen Han Hung

IPC: H01L23/522 ,  H01L23/66 ,  H01L49/02 ,  H01L21/768 ,  H01L23/64

Abstract: A device includes a substrate, a first conductive layer on the substrate, a first conductive via, and further conductive layers and conductive vias between the first conductive via and the substrate. The first conductive via is between the substrate and the first conductive layer, and is electrically connected to the first conductive layer. The first conductive via extends through at least two dielectric layers, and has thickness greater than about 8 kilo-Angstroms. An inductor having high quality factor is formed in the first conductive layer and also includes the first conductive via.