公开(公告)号：US10170601B2

公开(公告)日：2019-01-01

申请号：US15697150

申请日：2017-09-06

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Tsung Kuo ,  Chuan-Feng Chen

IPC: H01L21/70 ,  H01L29/732 ,  H01L29/06 ,  H01L29/08 ,  H01L29/66 ,  H01L29/16 ,  H01L29/10

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a collector element formed in or over a semiconductor substrate. The semiconductor device structure also includes a semiconductor element over the collector element, and the semiconductor element has a top surface, a bottom surface, and a side surface. The semiconductor device structure further includes an emitter element over the top surface of the semiconductor element. In addition, the semiconductor device structure includes a base element over the collector element and in direct contact with the side surface of the semiconductor element.