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公开(公告)号:US11569562B2
公开(公告)日:2023-01-31
申请号:US16997958
申请日:2020-08-20
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Yen-Ping Wang , Chun-Lin Lu , Han-Ping Pu , Kai-Chiang Wu , Chung-Yi Hsu
Abstract: A semiconductor package and a manufacturing method thereof are provided. The semiconductor package includes: patch antennas, encapsulated by a first encapsulant; a device die, vertically spaced apart from the patch antennas, and electrically coupled to the patch antennas; and at least one redistribution structure, disposed between the patch antennas and the device die, and including electromagnetic bandgap (EBG) structures laterally surrounding each of the patch antennas.
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公开(公告)号:US20220028773A1
公开(公告)日:2022-01-27
申请号:US16934024
申请日:2020-07-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Lin Lu , Jiun-Yi Wu , Kai-Chiang Wu
IPC: H01L23/498 , H01L21/48 , H01L23/00 , H01L25/18 , H01L21/683
Abstract: A package structure including a redistribution circuit structure, a wiring substrate, an insulating encapsulation, a buffer layer, a semiconductor device and a stiffener ring is provided. The redistribution circuit structure includes a first surface and a second surface opposite to the first surface. The wiring substrate is disposed on the first surface of the redistribution circuit structure. The insulating encapsulation is disposed on the first surface of the redistribution circuit structure and laterally encapsulating the wiring substrate. The buffer layer is disposed over the second surface of the redistribution circuit structure. The semiconductor device is disposed on the buffer layer, and the semiconductor device is electrically connected to the wiring substrate through the redistribution circuit structure. The stiffener ring is adhered with the buffer layer by an adhesive.
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公开(公告)号:US11145595B2
公开(公告)日:2021-10-12
申请号:US16706805
申请日:2019-12-08
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Lin Lu , Han-Ping Pu , Kai-Chiang Wu , Nan-Chin Chuang
IPC: H01L23/52 , H01L23/522 , H01L23/498 , H01L23/528 , H01L23/00
Abstract: An integrated fan-out (InFO) package includes a first redistribution structure, a die, an encapsulant, a plurality of first through interlayer vias (TIV), a second redistribution structure, an insulating layer, a supporting layer, and a plurality of conductive patches. The die is disposed on the first redistribution structure. The encapsulant encapsulates the die. The first TIVs are embedded in the encapsulant. The second redistribution structure is disposed on the die, the first TIVs, and the encapsulant. The first redistribution structure is electrically connected to the second redistribution structure through the first TIVs. The insulating layer is disposed on the first redistribution structure opposite to the die and includes a plurality of air gaps. The supporting layer is over the insulating layer. The conductive patches are over the supporting layer. Locations of the conductive patches correspond to locations of the air gaps of the insulating layer.
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公开(公告)号:US20200035625A1
公开(公告)日:2020-01-30
申请号:US16421497
申请日:2019-05-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chuei-Tang Wang , Chung-Hao Tsai , Chen-Hua Yu , Chun-Lin Lu , Han-Ping Pu , Kai-Chiang Wu
IPC: H01L23/66 , H01L23/498 , H01L23/31 , H01L23/00 , H01L23/552 , H01L21/56 , H01L21/48
Abstract: A package includes a semiconductor package including a semiconductor die and a first insulating encapsulation, a substrate, and a second insulating encapsulation. The first insulating encapsulation encapsulates the semiconductor die. The substrate includes a redistribution circuitry, wherein the substrate is electrically coupled to the semiconductor package through the redistribution circuitry. The second insulating encapsulation is disposed on and partially covers the substrate, wherein the substrate is sandwiched between the semiconductor package and the second insulating encapsulation.
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公开(公告)号:US20190244834A1
公开(公告)日:2019-08-08
申请号:US16389993
申请日:2019-04-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kai-Chiang Wu , Chung-Hao Tsai , Chun-Lin Lu , Yen-Ping Wang , Che-Wei Hsu
Abstract: An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and a second redistribution structure. The first redistribution structure has a dielectric layer and a feed line disposed on the dielectric layer. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The insulation encapsulation has a protrusion laterally wraps around the feed line. The insulation encapsulation has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer. The second redistribution structure is disposed on the die and the insulation encapsulation.
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公开(公告)号:US20190123017A1
公开(公告)日:2019-04-25
申请号:US16223274
申请日:2018-12-18
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Lin Lu , Kai-Chiang Wu , Ming-Kai Liu , Yen-Ping Wang , Shih-Wei Liang , Ching-Feng Yang , Chia-Chun Miao , Hung-Jen Lin
IPC: H01L23/00
Abstract: Embodiments of mechanisms for forming a package structure are provided. The package structure includes a semiconductor die and a substrate. The package structure includes a pillar bump and an elongated solder bump bonded to the semiconductor die and the substrate. A height of the elongated solder bump is substantially equal to a height of the pillar bump. The elongated solder bump has a first width, at a first horizontal plane passing through an upper end of a sidewall surface of the elongated solder bump, and a second width, at a second horizontal plane passing through a midpoint of the sidewall surface. A ratio of the second width to the first width is in a range from about 0.5 to about 1.1.
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公开(公告)号:US20190067039A1
公开(公告)日:2019-02-28
申请号:US15690300
申请日:2017-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Kai-Chiang Wu , Chung-Hao Tsai , Chun-Lin Lu , Yen-Ping Wang , Che-Wei Hsu
Abstract: An integrated fan-out package includes a first redistribution structure, a die, an insulation encapsulation, and a second redistribution structure. The die is disposed on the first redistribution structure. The insulation encapsulation encapsulates the die. The second redistribution structure is disposed on the die and the insulation encapsulation. At least one of the first redistribution structure and the second redistribution structure includes a dielectric layer, a feed line, and a signal enhancement layer. The feed line is at least partially disposed on the dielectric layer. The signal enhancement layer covers the feed line. The signal enhancement layer has a lower dissipation factor (Df) and/or a lower permittivity (Dk) than the dielectric layer.
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公开(公告)号:US11424197B2
公开(公告)日:2022-08-23
申请号:US16421497
申请日:2019-05-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chuei-Tang Wang , Chung-Hao Tsai , Chen-Hua Yu , Chun-Lin Lu , Han-Ping Pu , Kai-Chiang Wu
IPC: H01L23/66 , H01L21/56 , H01L23/498 , H01L23/31 , H01L23/00 , H01L21/48 , H01L23/552
Abstract: A package includes a semiconductor package including a semiconductor die and a first insulating encapsulation, a substrate, and a second insulating encapsulation. The first insulating encapsulation encapsulates the semiconductor die. The substrate includes a redistribution circuitry, wherein the substrate is electrically coupled to the semiconductor package through the redistribution circuitry. The second insulating encapsulation is disposed on and partially covers the substrate, wherein the substrate is sandwiched between the semiconductor package and the second insulating encapsulation.
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公开(公告)号:US11289418B2
公开(公告)日:2022-03-29
申请号:US16882521
申请日:2020-05-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chien-Ling Hwang , Chun-Lin Lu , Kai-Chiang Wu
IPC: H01L23/522 , H01L23/31 , H01L21/48 , H01L21/56 , H01L23/66
Abstract: A package structure includes a redistribution circuit structure, at least one semiconductor die, an insulating encapsulation, insulators, and metallic patterns. The at least one semiconductor die is located on and electrically connected to the redistribution circuit structure. The insulating encapsulation encapsulates the at least one semiconductor die and located on the redistribution circuit structure. The insulators are located on the redistribution circuit structure, wherein the insulators are separated and spaced apart from each other, wherein edges of each of the insulators are distant from edges of the at least one semiconductor die by an offset in a stacking direction of the redistribution circuit structure and the insulating encapsulation. Each of the metallic patterns is located on a respective one of the insulators.
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公开(公告)号:US20210391230A1
公开(公告)日:2021-12-16
申请号:US17462115
申请日:2021-08-31
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Chun-Lin Lu , Kai-Chiang Wu , Yen-Ping Wang , Shih-Wei Liang , Ching-Feng Yang
Abstract: An interposer may comprise a metal layer above a substrate. A dam or a plurality of dams may be formed above the metal layer. A dam surrounds an area of a size larger than a size of a die which may be connected to a contact pad above the metal layer within the area. A dam may comprise a conductive material, or a non-conductive material, or both. An underfill may be formed under the die, above the metal layer, and contained within the area surrounded by the dam, so that no underfill may overflow outside the area surrounded by the dam. Additional package may be placed above the die connected to the interposer to form a package-on-package structure.
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