公开(公告)号：US20220208984A1

公开(公告)日：2022-06-30

申请号：US17655627

申请日：2022-03-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsung-Ta Tang ,  Yi-Ting Wang ,  Chung Ta Chen ,  Hsien-Ming Lee

IPC: H01L29/49 ,  H01L21/02 ,  H01L21/28 ,  H01L21/285 ,  H01L29/08 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

Abstract: A method of forming a semiconductor device includes forming a gate electrode in a wafer. The formation of the gate electrode includes depositing a work-function layer, after the work-function layer is deposited, performing a treatment on the wafer, wherein the treatment is performed by soaking the wafer using a silicon-containing gas; after the treatment, forming a metal capping layer over the work-function layer; and depositing a filling metal over the metal capping layer.