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公开(公告)号:US10535523B1
公开(公告)日:2020-01-14
申请号:US16117234
申请日:2018-08-30
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Po-Yu Lin , Chi-Yu Chou , Hsien-Ming Lee , Huai-Tei Yang , Chun-Chieh Wang , Yueh-Ching Pai , Chi-Jen Yang , Tsung-Ta Tang , Yi-Ting Wang
IPC: H01L21/28 , H01L29/49 , H01L21/3213 , H01L21/285
Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.
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公开(公告)号:US11545363B2
公开(公告)日:2023-01-03
申请号:US17128408
申请日:2020-12-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Po-Yu Lin , Chi-Yu Chou , Hsien-Ming Lee , Huai-Tei Yang , Chun-Chieh Wang , Yueh-Ching Pai , Chi-Jen Yang , Tsung-Ta Tang , Yi-Ting Wang
IPC: H01L21/28 , H01L29/49 , H01L21/3213 , H01L21/285
Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.
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公开(公告)号:US12170202B2
公开(公告)日:2024-12-17
申请号:US18149129
申请日:2023-01-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Po-Yu Lin , Chi-Yu Chou , Hsien-Ming Lee , Huai-Tei Yang , Chun-Chieh Wang , Yueh-Ching Pai , Chi-Jen Yang , Tsung-Ta Tang , Yi-Ting Wang
IPC: H01L23/00 , H01L21/28 , H01L21/285 , H01L21/3213 , H01L29/49
Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.
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公开(公告)号:US20230141521A1
公开(公告)日:2023-05-11
申请号:US18149129
申请日:2023-01-02
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Po-Yu LIN , Chi-Yu Chou , Hsien-Ming Lee , Huai-Tei Yang , Chun-Chieh Wang , Yueh-Ching Pai , Chi-Jen Yang , Tsung-Ta Tang , Yi-Ting Wang
IPC: H01L21/28 , H01L29/49 , H01L21/3213 , H01L21/285
CPC classification number: H01L21/28088 , H01L29/4966 , H01L21/32135 , H01L21/28556
Abstract: The present disclosure relates to a semiconductor device and a manufacturing method of fabricating a semiconductor structure. The method includes forming an opening in a substrate and depositing a conformal metal layer in the opening. The depositing includes performing one or more deposition cycles. The deposition includes flowing a first precursor into a deposition chamber and purging the deposition chamber to remove at least a portion of the first precursor. The method also includes flowing a second precursor into the deposition chamber to form a sublayer of the conformal metal layer and purging the deposition chamber to remove at least a portion of the second precursor. The method further includes performing a metallic halide etching (MHE) process that includes flowing a third precursor into the deposition chamber.
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公开(公告)号:US20220208984A1
公开(公告)日:2022-06-30
申请号:US17655627
申请日:2022-03-21
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor: Tsung-Ta Tang , Yi-Ting Wang , Chung Ta Chen , Hsien-Ming Lee
Abstract: A method of forming a semiconductor device includes forming a gate electrode in a wafer. The formation of the gate electrode includes depositing a work-function layer, after the work-function layer is deposited, performing a treatment on the wafer, wherein the treatment is performed by soaking the wafer using a silicon-containing gas; after the treatment, forming a metal capping layer over the work-function layer; and depositing a filling metal over the metal capping layer.
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