On-chip oscilloscope
    6.
    发明授权

    公开(公告)号:US11035886B2

    公开(公告)日:2021-06-15

    申请号:US16212090

    申请日:2018-12-06

    Abstract: A device is disclosed that includes a control circuit and a scope circuit. The control circuit is configured to delay a voltage signal to generate a first control signal. The scope circuit is configured to be operated in one of a first mode and a second mode according to the first control signal. In the first mode, the scope circuit is configured to generate a first current signal indicating amplitudes of the voltage signal, and in the second mode, the scope circuit is configured to stop generating the first current signal.

    On-chip oscilloscope
    8.
    发明授权

    公开(公告)号:US11835551B2

    公开(公告)日:2023-12-05

    申请号:US18069813

    申请日:2022-12-21

    CPC classification number: G01R13/00 G01R13/0218 G01R31/2851 G01R31/31726

    Abstract: A device includes a control circuit, a scope circuit, a first logic gate and a second logic gate. The control circuit is configured to generate a first control signal according to a voltage signal and a delayed signal. The scope circuit is configured to generate a first current signal in response to the first control signal and the voltage signal. The first logic gate is configured to perform a first logical operation on the voltage signal and one of the voltage signal and the delayed signal to generate a second control signal. The second logical gate configured to perform a second logical operation on the second control signal and a test control signal to generate a second current signal.

    Capacitor structure with low capacitance

    公开(公告)号:US10998397B2

    公开(公告)日:2021-05-04

    申请号:US16834265

    申请日:2020-03-30

    Abstract: Capacitor structures with low capacitances are disclosed. In one example, a capacitor structure is disclosed. The capacitor structure includes a first electrode and a second electrode. The first electrode comprises a first metal finger. The second electrode comprises a second metal finger and a third metal finger that are parallel to each other and to the first metal finger. The first metal finger is formed between the second metal finger and the third metal finger. The capacitor structure further includes: a fourth metal finger formed as a dummy metal finger between the first metal finger and the second metal finger, and a fifth metal finger formed as a dummy metal finger between the first metal finger and the third metal finger. The fourth metal finger and the fifth metal finger are parallel to the first metal finger.

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