公开(公告)号：US20130171746A1

公开(公告)日：2013-07-04

申请号：US13777212

申请日：2013-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Chang ,  Hsin-Hsien Wu ,  Zin-Chang Wei ,  Chi-Ming Yang ,  Chyi-Shyuan Chern ,  Jun-Lin Yeh ,  Jih-Jse Lin ,  Jo-Fei Wang ,  Ming-Yu Fan ,  Jong-I Mou

IPC: H01L21/66

CPC classification number: H01L22/20 ,  H01L21/67248 ,  H01L21/67253 ,  H01L22/12

Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

公开(公告)号：US09023664B2

公开(公告)日：2015-05-05

申请号：US13777212

申请日：2013-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chun-Lin Chang ,  Hsin-Hsien Wu ,  Zin-Chang Wei ,  Chi-Ming Yang ,  Chyi-Shyuan Chern ,  Jun-Lin Yeh ,  Jih-Jse Lin ,  Jo-Fei Wang ,  Ming-Yu Fan ,  Jong-I Mou

IPC: H01L21/00 ,  H01L21/66 ,  H01L21/67

CPC classification number: H01L22/20 ,  H01L21/67248 ,  H01L21/67253 ,  H01L22/12

Abstract: An apparatus and a method for controlling critical dimension (CD) of a circuit is provided. An apparatus includes a controller for receiving CD measurements at respective locations in a circuit pattern in an etched film on a first substrate and a single wafer chamber for forming a second film of the film material on a second substrate. The single wafer chamber is responsive to a signal from the controller to locally adjust a thickness of the second film based on the measured CD's. A method provides for etching a circuit pattern of a film on a first substrate, measuring CD's of the circuit pattern, adjusting a single wafer chamber to form a second film on a second semiconductor substrate based on the measured CD. The second film thickness is locally adjusted based on the measured CD's.

Abstract translation: 提供了一种用于控制电路的关键尺寸（CD）的装置和方法。 一种装置包括控制器，用于在第一基板上的蚀刻膜中的电路图案的各个位置处接收CD测量值，以及用于在第二基板上形成膜材料的第二膜的单晶片室。 单个晶片室响应于来自控制器的信号，以基于测量的CD来局部地调整第二胶片的厚度。 一种方法提供了蚀刻第一衬底上的膜的电路图案，测量电路图案的CD，基于所测量的CD调整单晶片室以在第二半导体衬底上形成第二膜。 基于测量的CD来局部地调整第二膜厚度。