公开(公告)号：US20230387065A1

公开(公告)日：2023-11-30

申请号：US18447968

申请日：2023-08-10

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： De-Yang CHIOU ,  Yu-Yun Peng ,  Fu-Ting Yen ,  Keng-Chu Lin

IPC: H01L23/00 ,  H01L23/48 ,  H01L25/065 ,  H01L25/00

CPC classification number: H01L24/32 ,  H01L23/481 ,  H01L24/29 ,  H01L24/83 ,  H01L25/0657 ,  H01L25/50 ,  H01L2924/3512 ,  H01L2224/29188 ,  H01L2224/32145 ,  H01L2224/83013 ,  H01L2224/83896 ,  H01L2924/05442 ,  H01L2924/05042 ,  H01L2225/06541

Abstract: The present disclosure describes a semiconductor structure having bonded wafers with storage layers and a method to bond wafers with storage layers. The semiconductor structure includes a first wafer including a first storage layer with carbon, a second wafer including a second storage layer with carbon, and a bonding layer interposed between the first and second wafers and in contact with the first and second storage layers.