公开(公告)号：US20230155005A1

公开(公告)日：2023-05-18

申请号：US17663278

申请日：2022-05-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Lien Huang ,  Hao-Heng Liu ,  Po-Chin Chang ,  Yi-Shan Chen ,  Ming-Huan Tsai

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/78 ,  H01L29/417 ,  H01L27/088

CPC classification number: H01L29/66795 ,  H01L21/823431 ,  H01L29/7851 ,  H01L21/823481 ,  H01L21/823418 ,  H01L29/41791 ,  H01L27/0886

Abstract: A method includes forming a first fin and a second fin protruding from a substrate; forming an isolation layer surrounding the first fin and the second fin; epitaxially growing a first epitaxial region on the first fin and a second epitaxial region on the second fin, wherein the first epitaxial region and the second epitaxial region are merged together; performing an etching process on the first epitaxial region and the second epitaxial region, wherein the etching process separates the first epitaxial region from the second epitaxial region; depositing a dielectric material between the first epitaxial region and the second epitaxial region; and forming a first gate stack extending over the first fin.