公开(公告)号：US20250089330A1

公开(公告)日：2025-03-13

申请号：US18516147

申请日：2023-11-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yu Wei ,  Cheng-I Lin ,  Hao-Ming Tang ,  Shu-Han Chen ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/8234 ,  H01L27/088 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: A method includes forming a protruding fin, and forming a first dielectric layer including a first dielectric layer and a second dielectric layer over the first dielectric layer. The first dielectric layer includes a first top portion on a top surface of the protruding fin, and a sidewall portion on a sidewall of the protruding fin. The second dielectric layer is over the first top portion and the top surface of the protruding fin, and is formed using an anisotropic deposition process. The method further includes forming a dummy gate electrode on the second dielectric layer, forming a gate spacer on a sidewall of the dummy gate electrode, removing the dummy gate electrode, and forming a replacement gate electrode in a space left by the dummy gate electrode.

公开(公告)号：US20250048703A1

公开(公告)日：2025-02-06

申请号：US18490363

申请日：2023-10-19

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Cheng-Yu Wei ,  Hao-Ming Tang ,  Cheng-I Lin ,  Shu-Han Chen ,  Chi On Chui

IPC: H01L29/66 ,  H01L21/311 ,  H01L21/8238 ,  H01L21/8258 ,  H01L27/092 ,  H01L29/423 ,  H01L29/775 ,  H01L29/786

Abstract: Semiconductor devices and methods of manufacture are presented. In embodiments a method of manufacturing the semiconductor device includes forming a fin from a plurality of semiconductor materials, depositing a dummy gate over the fin, depositing a plurality of spacers adjacent to the dummy gate, removing the dummy gate to form an opening adjacent to the plurality of spacers, widening the opening adjacent to a top surface of the plurality of spacers, after the widening, removing one of the plurality of semiconductor materials to form nanowires, and depositing a gate electrode around the nanowires.