公开(公告)号：US20230282750A1

公开(公告)日：2023-09-07

申请号：US17841493

申请日：2022-06-15

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Lien Huang ,  Tze-Liang Lee ,  Jr-Hung Li ,  Chi-Hao Chang ,  Hao-Yu Chang ,  Pei-Yu Chou

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/7851 ,  H01L29/66795

Abstract: Methods of forming improved dielectric layers and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a transistor structure on a semiconductor substrate; a first dielectric layer on the transistor structure; a second dielectric layer on the first dielectric layer, the second dielectric layer having a nitrogen concentration greater than a nitrogen concentration of the first dielectric layer; a first conductive structure extending through the second dielectric layer and the first dielectric layer, the first conductive structure being electrically coupled to a first source/drain region of the transistor structure, a top surface of the first conductive structure being level with a top surface of the second dielectric layer; and a second conductive structure physically and electrically coupled to the first conductive structure, a bottom surface of the second conductive structure being a first distance below the top surface of the second dielectric layer.