Method for cleaning a semiconductor substrate

    公开(公告)号:US11145521B2

    公开(公告)日:2021-10-12

    申请号:US15718044

    申请日:2017-09-28

    Abstract: A method for cleaning a semiconductor substrate is provided. The method includes the steps of: applying a first agent onto a top surface of the semiconductor substrate while the semiconductor substrate is rotated at a first rotational frequency; immersing the semiconductor substrate in a second agent while rotating the semiconductor substrate at a second rotational frequency; and rotating the semiconductor substrate at a third rotational frequency while a third agent is introduced onto the top surface of the semiconductor substrate. The first rotational frequency may be greater than the third rotational frequency and the third rotational frequency is greater than the second rotational frequency. In some embodiments, the second rotational frequency is zero and the semiconductor substrate is held stationary during the immersing step.

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