公开(公告)号：US09941131B1

公开(公告)日：2018-04-10

申请号：US15460580

申请日：2017-03-16

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Ming-Hung Lin ,  Hsiao-Yi Wang ,  Yen-Min Liao ,  Hsin-Jung Lu ,  Diau-Tang Huang

IPC: B44C1/22 ,  C03C15/00 ,  C03C25/68 ,  C23F1/00 ,  H01L21/306 ,  H01L21/687 ,  H01L23/544 ,  B08B3/04

CPC classification number: H01L21/30604 ,  B05B15/50 ,  G03F7/00 ,  H01L21/6715 ,  H01L21/681 ,  H01L23/544 ,  H01L2223/54426

Abstract: A method for applying developer over a semiconductor wafer is provided. The method includes moving a nozzle over the center of the semiconductor wafer. The nozzle extends across the semiconductor wafer. The method also includes rotating the semiconductor wafer by a dispensing rotation angle that is less than 180 degrees. The method further includes dispensing developer over the semiconductor wafer relative to alignment marks formed on the semiconductor wafer while the semiconductor wafer is rotated by the dispensing rotation angle.

公开(公告)号：US11061333B2

公开(公告)日：2021-07-13

申请号：US15905739

申请日：2018-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kai Chen ,  Chia-Hung Chung ,  Ko-Bin Kao ,  Su-Yu Yeh ,  Li-Jen Wu ,  Zhi-You Ke ,  Ming-Hung Lin

IPC: G03F7/20 ,  G03F7/40 ,  H01L21/027 ,  H01L21/66 ,  G03F7/039 ,  G03F7/004 ,  G03F7/32 ,  G03F7/16 ,  G03F7/30 ,  H01L29/66 ,  H01L21/67 ,  H01L29/78

Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.

公开(公告)号：US20190146348A1

公开(公告)日：2019-05-16

申请号：US15905739

申请日：2018-02-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Yu-Kai Chen ,  Chia-Hung Chung ,  Ko-Bin Kao ,  Su-Yu Yeh ,  Li-Jen Wu ,  Zhi-You Ke ,  Ming-Hung Lin

IPC: G03F7/40 ,  H01L21/027 ,  H01L21/66 ,  G03F7/039 ,  G03F7/004 ,  G03F7/16 ,  G03F7/20 ,  G03F7/32

Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.