公开(公告)号：US09991154B2

公开(公告)日：2018-06-05

申请号：US15054113

申请日：2016-02-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Ken Lin ,  Jia-Ming Lin ,  Hsien-Che Teng ,  Yung-Chou Shih ,  Kun-Dian She ,  Lichia Yang ,  Yun-Wen Chu

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L21/76224 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02236 ,  H01L21/02271 ,  H01L21/02326 ,  H01L21/02337 ,  H01L29/66795 ,  H01L29/7848

Abstract: A method for fabricating a shallow trench isolation (STI) structure comprises the following steps. A silane-base precursor having a volumetric flowrate of 500 to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 to 600 sccm are introduced and mixed under a first pressure ranging from 0.5 to 1.5 torr at a first temperature ranging from 30 to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate. Then, ozone gas and oxygen gas are introduced and mixed under a second pressure ranging from 300 to 650 torr at a second temperature ranging from 50 to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1:1 to 3:1. A method for fabricating a FinFET is provided.

公开(公告)号：US20170250106A1

公开(公告)日：2017-08-31

申请号：US15054113

申请日：2016-02-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Ken Lin ,  Jia-Ming Lin ,  Hsien-Che Teng ,  Yung-Chou Shih ,  Kun-Dian She ,  Lichia Yang ,  Yun-Wen Chu

IPC: H01L21/762 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/76224 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02236 ,  H01L21/02271 ,  H01L21/02326 ,  H01L21/02337 ,  H01L29/66795 ,  H01L29/7848

Abstract: A method for fabricating a shallow trench isolation (STI) structure comprises the following steps. A silane-base precursor having a volumetric flowrate of 500 to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 to 600 sccm are introduced and mixed under a first pressure ranging from 0.5 to 1.5 torr at a first temperature ranging from 30 to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate. Then, ozone gas and oxygen gas are introduced and mixed under a second pressure ranging from 300 to 650 torr at a second temperature ranging from 50 to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1:1 to 3:1. A method for fabricating a FinFET is provided.