公开(公告)号：US20150132973A1

公开(公告)日：2015-05-14

申请号：US14079945

申请日：2013-11-14

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Teng-Da Hung ,  Liang-Chang Hsieh ,  Chun-Lung Lin ,  Hsin-Hung Chi ,  Yun-Wen Chu ,  Jiun-Wei Su

IPC: H01L21/324 ,  H01L21/67 ,  H01L21/683

CPC classification number: H01L21/67115 ,  H01L21/6719

Abstract: An ultraviolet curing apparatus includes a chamber, a gas flow generator, and an ultraviolet lamp. The gas flow generator includes a top liner and a bottom liner coupled to each other. The top liner and the bottom liner are disposed in the chamber, and are made of low-coefficient of thermal expansion material. The ultraviolet lamp is disposed on the chamber and is configured for providing ultraviolet light.

Abstract translation: 紫外线固化装置包括室，气流发生器和紫外线灯。 气流发生器包括彼此连接的顶衬和底衬。 顶部衬套和底部衬套设置在室中，并且由低系数的热膨胀材料制成。 紫外线灯设置在室上并且被配置为提供紫外线。

公开(公告)号：US10276677B2

公开(公告)日：2019-04-30

申请号：US15494023

申请日：2017-04-21

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen Huang ,  Yun-Wen Chu ,  Hong-Hsien Ke ,  Chia-Hui Lin ,  Shin-Yeu Tsai ,  Shih-Chieh Chang

IPC: H01L29/423 ,  H01L21/02 ,  H01L21/311 ,  H01L29/06 ,  H01L29/40 ,  H01L29/66 ,  H01L29/78

Abstract: Semiconductor device structures and methods for forming the same are provided. A method for forming a semiconductor device structure includes forming a gate structure over a semiconductor substrate. The method also includes forming spacer elements adjoining sidewalls of the gate structure. The method further includes forming a protection material layer over the gate structure. The formation of the protection material layer includes a substantial non-plasma process. In addition, the method includes depositing a dielectric material layer over the protection material layer. The deposition of the dielectric material layer includes a plasma-involved process.

公开(公告)号：US09991154B2

公开(公告)日：2018-06-05

申请号：US15054113

申请日：2016-02-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Ken Lin ,  Jia-Ming Lin ,  Hsien-Che Teng ,  Yung-Chou Shih ,  Kun-Dian She ,  Lichia Yang ,  Yun-Wen Chu

IPC: H01L21/76 ,  H01L21/762 ,  H01L21/02 ,  H01L29/78 ,  H01L29/66

CPC classification number: H01L21/76224 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02236 ,  H01L21/02271 ,  H01L21/02326 ,  H01L21/02337 ,  H01L29/66795 ,  H01L29/7848

Abstract: A method for fabricating a shallow trench isolation (STI) structure comprises the following steps. A silane-base precursor having a volumetric flowrate of 500 to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 to 600 sccm are introduced and mixed under a first pressure ranging from 0.5 to 1.5 torr at a first temperature ranging from 30 to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate. Then, ozone gas and oxygen gas are introduced and mixed under a second pressure ranging from 300 to 650 torr at a second temperature ranging from 50 to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1:1 to 3:1. A method for fabricating a FinFET is provided.

公开(公告)号：US20170250106A1

公开(公告)日：2017-08-31

申请号：US15054113

申请日：2016-02-25

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei Ken Lin ,  Jia-Ming Lin ,  Hsien-Che Teng ,  Yung-Chou Shih ,  Kun-Dian She ,  Lichia Yang ,  Yun-Wen Chu

IPC: H01L21/762 ,  H01L29/78 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/76224 ,  H01L21/02164 ,  H01L21/02211 ,  H01L21/02236 ,  H01L21/02271 ,  H01L21/02326 ,  H01L21/02337 ,  H01L29/66795 ,  H01L29/7848

Abstract: A method for fabricating a shallow trench isolation (STI) structure comprises the following steps. A silane-base precursor having a volumetric flowrate of 500 to 750 sccm and a nitrogen-base precursor having a volumetric flowrate of 300 to 600 sccm are introduced and mixed under a first pressure ranging from 0.5 to 1.5 torr at a first temperature ranging from 30 to 105 centigrade to deposit a flowable dielectric layer in a trench of a substrate. Then, ozone gas and oxygen gas are introduced and mixed under a second pressure ranging from 300 to 650 torr at a second temperature ranging from 50 to 250 centigrade to treat the flowable dielectric layer, wherein a volumetric flowrate ratio of ozone gas and oxygen gas ranges from 1:1 to 3:1. A method for fabricating a FinFET is provided.

公开(公告)号：US11049945B2

公开(公告)日：2021-06-29

申请号：US16398079

申请日：2019-04-29

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shih-Wen Huang ,  Yun-Wen Chu ,  Hong-Hsien Ke ,  Chia-Hui Lin ,  Shin-Yeu Tsai ,  Shih-Chieh Chang

IPC: H01L29/49 ,  H01L29/423 ,  H01L21/02 ,  H01L21/311 ,  H01L29/06 ,  H01L29/40 ,  H01L29/78 ,  H01L29/66

Abstract: Semiconductor device structures and methods for forming the same are provided. A semiconductor device structure includes a gate structure over a semiconductor substrate. The gate structure includes a gate electrode layer and a gate dielectric layer covering a bottom surface and sidewalls of the gate electrode layer. The semiconductor device structure also includes spacer elements in contact with sidewalls of the gate structure and protruding from a top surface of the gate electrode layer. The semiconductor device structure also includes a first protection layer over the gate electrode layer and between the spacer elements. The semiconductor device structure also includes a dielectric layer over the first protection layer and between the spacer elements. A portion of the dielectric layer is between sidewalls of the spacer elements and sidewalls of the first protection layer.

公开(公告)号：US09496157B2

公开(公告)日：2016-11-15

申请号：US14079945

申请日：2013-11-14

Applicant: Taiwan Semiconductor Manufacturing CO., LTD.

Inventor： Teng-Da Hung ,  Liang-Chang Hsieh ,  Chun-Lung Lin ,  Hsin-Hung Chi ,  Yun-Wen Chu ,  Jiun-Wei Su

IPC: H01L21/00 ,  H01L21/67

CPC classification number: H01L21/67115 ,  H01L21/6719

Abstract: An ultraviolet curing apparatus includes a chamber, a gas flow generator, and an ultraviolet lamp. The gas flow generator includes a top liner and a bottom liner coupled to each other. The top liner and the bottom liner are disposed in the chamber, and are made of low-coefficient of thermal expansion material. The ultraviolet lamp is disposed on the chamber and is configured for providing ultraviolet light.

Abstract translation: 紫外线固化装置包括室，气流发生器和紫外线灯。 气流发生器包括彼此连接的顶衬和底衬。 顶部衬套和底部衬套设置在室中，并且由低系数的热膨胀材料制成。 紫外线灯设置在室上并且被配置为提供紫外线。