公开(公告)号：US20220367376A1

公开(公告)日：2022-11-17

申请号：US17815026

申请日：2022-07-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Pang Kuo ,  Huan-Yu Shih ,  Wen-Hsuan Chen ,  Cheng-Lun Tsai ,  Ya-Lien Lee ,  Cheng-Hui Weng ,  Chun-Chieh Lin ,  Hung-Wen Su ,  Yao-Min Liu

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

公开(公告)号：US11676898B2

公开(公告)日：2023-06-13

申请号：US16899055

申请日：2020-06-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Pang Kuo ,  Huan-Yu Shih ,  Wen-Hsuan Chen ,  Cheng-Lun Tsai ,  Ya-Lien Lee ,  Cheng-Hui Weng ,  Chun-Chieh Lin ,  Hung-Wen Su ,  Yao-Min Liu

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

CPC classification number: H01L23/53238 ,  H01L21/0262 ,  H01L21/02458 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/5283

Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

公开(公告)号：US20210391275A1

公开(公告)日：2021-12-16

申请号：US16899055

申请日：2020-06-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Chia-Pang Kuo ,  Huan-Yu Shih ,  Wen-Hsuan Chen ,  Cheng-Lun Tsai ,  Ya-Lien Lee ,  Cheng-Hui Weng ,  Chun-Chieh Lin ,  Hung-Wen Su ,  Yao-Min Liu

IPC: H01L23/532 ,  H01L21/768 ,  H01L21/02 ,  H01L23/522 ,  H01L23/528

Abstract: A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.