公开(公告)号：US11527476B2

公开(公告)日：2022-12-13

申请号：US17143496

申请日：2021-01-07

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yao-Min Liu ,  Chia-Pang Kuo ,  Chien Chung Huang ,  Chih-Yi Chang ,  Ya-Lien Lee ,  Chun-Chieh Lin ,  Hung-Wen Su ,  Ming-Hsing Tsai

IPC分类号： H01L23/522 ,  H01L21/768

摘要： A semiconductor structure and a method of forming the same are provided. A method includes depositing a dielectric layer over a conductive feature. The dielectric layer is patterned to form an opening therein. The opening exposes a first portion of the conductive feature. A first barrier layer is deposited on a sidewall of the opening. The first portion of the conductive feature remains exposed at the end of depositing the first barrier layer.

公开(公告)号：US20220367376A1

公开(公告)日：2022-11-17

申请号：US17815026

申请日：2022-07-26

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Pang Kuo ,  Huan-Yu Shih ,  Wen-Hsuan Chen ,  Cheng-Lun Tsai ,  Ya-Lien Lee ,  Cheng-Hui Weng ,  Chun-Chieh Lin ,  Hung-Wen Su ,  Yao-Min Liu

IPC分类号： H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

摘要： A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

公开(公告)号：US20220084937A1

公开(公告)日：2022-03-17

申请号：US17143496

申请日：2021-01-07

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yao-Min Liu ,  Chia-Pang Kuo ,  Chien Chung Huang ,  Chih-Yi Chang ,  Ya-Lien Lee ,  Chun-Chieh Lin ,  Hung-Wen Su ,  Ming-Hsing Tsai

IPC分类号： H01L23/522 ,  H01L21/768

摘要： A semiconductor structure and a method of forming the same are provided. A method includes depositing a dielectric layer over a conductive feature. The dielectric layer is patterned to form an opening therein. The opening exposes a first portion of the conductive feature. A first barrier layer is deposited on a sidewall of the opening. The first portion of the conductive feature remains exposed at the end of depositing the first barrier layer.

公开(公告)号：US11676898B2

公开(公告)日：2023-06-13

申请号：US16899055

申请日：2020-06-11

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Pang Kuo ,  Huan-Yu Shih ,  Wen-Hsuan Chen ,  Cheng-Lun Tsai ,  Ya-Lien Lee ,  Cheng-Hui Weng ,  Chun-Chieh Lin ,  Hung-Wen Su ,  Yao-Min Liu

IPC分类号： H01L23/532 ,  H01L21/02 ,  H01L21/768 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L23/53238 ,  H01L21/0262 ,  H01L21/02458 ,  H01L21/76831 ,  H01L21/76843 ,  H01L23/5226 ,  H01L23/5283

摘要： A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.

公开(公告)号：US20220165616A1

公开(公告)日：2022-05-26

申请号：US17669665

申请日：2022-02-11

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Yao-Min Liu ,  Chia-Pang Kuo ,  Shu-Cheng Chin ,  Chih-Chien Chi ,  Cheng-Hui Weng ,  Hung-Wen Su ,  Ming-Hsing Tsai

IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L23/522

摘要： A method includes forming a first conductive feature in a first dielectric layer. A second dielectric layer is formed over the first conductive feature and the first dielectric layer. An opening is formed in the second dielectric layer. The opening exposes a top surface of the first conductive feature. The top surface of the first conductive feature includes a first metallic material and a second metallic material different from the first metallic material. A native oxide layer is removed from the top surface of the first conductive feature. A surfactant soaking process is performed on the top surface of the first conductive feature. The surfactant soaking process forms a surfactant layer over the top surface of the first conductive feature. A first barrier layer is deposited on a sidewall of the opening. The surfactant layer remains exposed at the end of depositing the first barrier layer.

公开(公告)号：US20210391275A1

公开(公告)日：2021-12-16

申请号：US16899055

申请日：2020-06-11

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Chia-Pang Kuo ,  Huan-Yu Shih ,  Wen-Hsuan Chen ,  Cheng-Lun Tsai ,  Ya-Lien Lee ,  Cheng-Hui Weng ,  Chun-Chieh Lin ,  Hung-Wen Su ,  Yao-Min Liu

IPC分类号： H01L23/532 ,  H01L21/768 ,  H01L21/02 ,  H01L23/522 ,  H01L23/528

摘要： A method includes forming an insulating layer over a conductive feature; etching the insulating layer to expose a first surface of the conductive feature; covering the first surface of the conductive feature with a sacrificial material, wherein the sidewalls of the insulating layer are free of the sacrificial material; covering the sidewalls of the insulating layer with a barrier material, wherein the first surface of the conductive feature is free of the barrier material, wherein the barrier material includes tantalum nitride (TaN) doped with a transition metal; removing the sacrificial material; and covering the barrier material and the first surface of the conductive feature with a conductive material.