公开(公告)号：US20220246479A1

公开(公告)日：2022-08-04

申请号：US17232898

申请日：2021-04-16

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hui-Lin Huang ,  Li-Li Su ,  Yee-Chia Yeo ,  Chii-Horng Li

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417 ,  H01L29/423 ,  H01L29/45 ,  H01L29/786 ,  H01L21/02 ,  H01L21/033 ,  H01L21/285 ,  H01L29/66

摘要： A method includes etching a first recess adjacent a first dummy gate stack and a first fin; etching a second recess adjacent a second dummy gate stack and a second fin; and epitaxially growing a first epitaxy region in the first recess. The method further includes depositing a first metal-comprising mask over the first dummy gate stack, over the second dummy gate stack, over the first epitaxy region in the first recess, and in the second recess; patterning the first metal-comprising mask to expose the first dummy gate stack and the first epitaxy region; epitaxially growing a second epitaxy region in the first recess over the first epitaxy region; and after epitaxially growing the second epitaxy region, removing remaining portions of the first metal-comprising mask.

公开(公告)号：US20230275123A1

公开(公告)日：2023-08-31

申请号：US17835139

申请日：2022-06-08

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Wei-Min Liu ,  Tsz-Mei Kwok ,  Hui-Lin Huang ,  Cheng-Yen Wen ,  Li-Li Su ,  Chii-Horng Li ,  Yee-Chia Yeo

IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/8234

CPC分类号： H01L29/0665 ,  H01L29/42392 ,  H01L29/78618 ,  H01L29/78696 ,  H01L29/66742 ,  H01L29/6656 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823468

摘要： In an embodiment, a device includes: a semiconductor fin extending from a semiconductor substrate; a nanostructure above the semiconductor fin; a source/drain region adjacent a channel region of the nanostructure; a bottom spacer between the source/drain region and the semiconductor fin; and a gap between the bottom spacer and the source/drain region.

公开(公告)号：US20230377989A1

公开(公告)日：2023-11-23

申请号：US18365832

申请日：2023-08-04

申请人： Taiwan Semiconductor Manufacturing Co., Ltd.

发明人： Hui-Lin Huang ,  Li-Li Su ,  Yee-Chia Yeo ,  Chii-Horng Li

IPC分类号： H01L21/8238 ,  H01L29/45 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/033 ,  H01L21/285 ,  H01L29/66 ,  H01L27/092 ,  H01L29/06 ,  H01L29/417

CPC分类号： H01L21/823814 ,  H01L29/45 ,  H01L29/42392 ,  H01L29/78696 ,  H01L21/0259 ,  H01L21/0332 ,  H01L21/28518 ,  H01L21/823807 ,  H01L21/823828 ,  H01L21/823864 ,  H01L21/823871 ,  H01L29/66553 ,  H01L29/66545 ,  H01L29/66636 ,  H01L29/66742 ,  H01L27/092 ,  H01L29/0665 ,  H01L29/41733 ,  H01L29/78618

摘要： A method includes etching a first recess adjacent a first dummy gate stack and a first fin; etching a second recess adjacent a second dummy gate stack and a second fin; and epitaxially growing a first epitaxy region in the first recess. The method further includes depositing a first metal-comprising mask over the first dummy gate stack, over the second dummy gate stack, over the first epitaxy region in the first recess, and in the second recess; patterning the first metal-comprising mask to expose the first dummy gate stack and the first epitaxy region; epitaxially growing a second epitaxy region in the first recess over the first epitaxy region; and after epitaxially growing the second epitaxy region, removing remaining portions of the first metal-comprising mask.