公开(公告)号：US20230369502A1

公开(公告)日：2023-11-16

申请号：US17663165

申请日：2022-05-12

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Shao-Yang Ma ,  Cheng-Yen Wen ,  Li-Li Su ,  Chil-Horng Li ,  Yee-Chia Yeo

IPC: H01L29/786 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L29/78618 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/78696 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/02576 ,  H01L29/66742

Abstract: A semiconductor device including a seeding layer in the source/drain region and a method of forming is provided. The semiconductor device may include a plurality of nanostructures over a substrate, a gate wrapping around the plurality of nanostructures, a source/drain region adjacent the plurality of nanostructures, and inner spacers between the source/drain region and the gate stack. The source/drain region may include a polycrystalline seeding layer covering sidewalls of the plurality of nanostructures and sidewalls of the inner spacers, and a semiconductor layer over the seeding layer. The semiconductor layer may have a higher dopant concentration than the seeding layer.

公开(公告)号：US20230275123A1

公开(公告)日：2023-08-31

申请号：US17835139

申请日：2022-06-08

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Min Liu ,  Tsz-Mei Kwok ,  Hui-Lin Huang ,  Cheng-Yen Wen ,  Li-Li Su ,  Chii-Horng Li ,  Yee-Chia Yeo

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L29/0665 ,  H01L29/42392 ,  H01L29/78618 ,  H01L29/78696 ,  H01L29/66742 ,  H01L29/6656 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823468

Abstract: In an embodiment, a device includes: a semiconductor fin extending from a semiconductor substrate; a nanostructure above the semiconductor fin; a source/drain region adjacent a channel region of the nanostructure; a bottom spacer between the source/drain region and the semiconductor fin; and a gap between the bottom spacer and the source/drain region.

公开(公告)号：US20230187524A1

公开(公告)日：2023-06-15

申请号：US17662930

申请日：2022-05-11

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Wei-Min Liu ,  Cheng-Yen Wen ,  Li-Li Su ,  Chii-Horng Li ,  Yee-Chia Yeo

IPC: H01L29/49 ,  H01L29/06 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66

CPC classification number: H01L29/4991 ,  H01L29/0665 ,  H01L29/42392 ,  H01L29/78696 ,  H01L21/0259 ,  H01L21/28123 ,  H01L29/66553 ,  H01L29/66742

Abstract: A method includes forming a stack of layers, which includes a plurality of semiconductor nano structures and a plurality of sacrificial layers. The plurality of semiconductor nano structures and the plurality of sacrificial layers are arranged alternatingly. The method further includes laterally recessing the plurality of sacrificial layers to form lateral recesses, forming inner spacers in the lateral recesses, and epitaxially growing a source/drain region from the plurality of semiconductor nano structures. The source/drain region is spaced apart from the inner spacers by air inner spacers.

公开(公告)号：US20230028591A1

公开(公告)日：2023-01-26

申请号：US17657822

申请日：2022-04-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Tsz-Mei Kwok ,  Yung-Chun Yang ,  Cheng-Yen Wen ,  Li-Li Su ,  Yee-Chia Yeo

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/06 ,  H01L29/423 ,  H01L21/02 ,  H01L29/66 ,  H01L21/285

Abstract: A method includes forming a protruding semiconductor stack including a plurality of sacrificial layers and a plurality of nanostructures, with the plurality of sacrificial layers and the plurality of nanostructures being laid out alternatingly. The method further includes forming a dummy gate structure on the protruding semiconductor stack, etching the protruding semiconductor stack to form a source/drain recess, and forming a source/drain region in the source/drain recess. The formation of the source/drain region includes growing first epitaxial layers. The first epitaxial layers are grown on sidewalls of the plurality of nanostructures, and a cross-section of each of the first epitaxial layers has a quadrilateral shape. The first epitaxial layers have a first dopant concentration. The formation of the source/drain region further includes growing a second epitaxial layer on the first epitaxial layers. The second epitaxial layer has a second dopant concentration higher than the first dopant concentration.