公开(公告)号：US12199036B2

公开(公告)日：2025-01-14

申请号：US17871532

申请日：2022-07-22

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jason Huang ,  Liang-Chor Chung ,  Cheng-Yuan Li

IPC: H01L23/528 ,  H01L21/02 ,  H01L21/285 ,  H01L21/768

Abstract: The present disclosure describes an interconnect structure and a method forming the same. The interconnect structure can include a substrate, a layer of conductive material over the substrate, a metallic capping layer over the layer of conductive material, a layer of insulating material over top and side surfaces of the metallic capping layer, and a layer of trench conductor formed in the layer of insulating material and the metallic capping layer.

公开(公告)号：US20210193565A1

公开(公告)日：2021-06-24

申请号：US16940034

申请日：2020-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jason Huang ,  Liang-Chor Chung ,  Cheng-Yuan Li

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/285 ,  H01L21/02

Abstract: The present disclosure describes an interconnect structure and a method forming the same. The interconnect structure can include a substrate, a layer of conductive material over the substrate, a metallic capping layer over the layer of conductive material, a layer of insulating material over top and side surfaces of the metallic capping layer, and a layer of trench conductor formed in the layer of insulating material and the metallic capping layer.

公开(公告)号：US11476191B2

公开(公告)日：2022-10-18

申请号：US16940034

申请日：2020-07-27

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jason Huang ,  Liang-Chor Chung ,  Cheng-Yuan Li

IPC: H01L23/528 ,  H01L21/768 ,  H01L21/02 ,  H01L21/285

Abstract: The present disclosure describes an interconnect structure and a method forming the same. The interconnect structure can include a substrate, a layer of conductive material over the substrate, a metallic capping layer over the layer of conductive material, a layer of insulating material over top and side surfaces of the metallic capping layer, and a layer of trench conductor formed in the layer of insulating material and the metallic capping layer.