公开(公告)号：US12173736B2

公开(公告)日：2024-12-24

申请号：US18365776

申请日：2023-08-04

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jheng-Syun Li ,  Mao-Chou Huang

IPC: F15D1/06 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/67

Abstract: A conduit system for transporting gas from a gas containing chamber for processing a substrate from which semiconductor devices are formed includes a liner with a spiral vent. The conduit system utilizes a curtain of gas to prevent or reduce deposition of material onto an inner surface of the conduit transporting the gas from the gas containing chamber.

公开(公告)号：US11971057B2

公开(公告)日：2024-04-30

申请号：US17097820

申请日：2020-11-13

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jheng-Syun Li ,  Mao-Chou Huang

IPC: F15D1/06 ,  C23C16/44 ,  C23C16/455 ,  C23C16/50 ,  H01J37/32 ,  H01L21/67

CPC classification number: F15D1/06 ,  C23C16/4412 ,  C23C16/45519 ,  C23C16/50 ,  H01J37/3244 ,  H01L21/67017 ,  H01J37/32082 ,  H01J2237/3321

Abstract: A conduit system for transporting gas from a gas containing chamber for processing a substrate from which semiconductor devices are formed includes a liner with a spiral vent. The conduit system utilizes a curtain of gas to prevent or reduce deposition of material onto an inner surface of the conduit transporting the gas from the gas containing chamber.