公开(公告)号：US20240071849A1

公开(公告)日：2024-02-29

申请号：US17822476

申请日：2022-08-26

Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.

Inventor： Jian-You Chen ,  Kuan-Yu Huang ,  Li-Chung Kuo ,  Chen-Hsuan Tsai ,  Kung-Chen Yeh ,  Hsien-Ju Tsou ,  Ying-Ching Shih ,  Szu-Wei Lu

IPC: H01L23/16 ,  H01L21/48 ,  H01L21/56 ,  H01L23/31 ,  H01L23/498

CPC classification number: H01L23/16 ,  H01L21/4857 ,  H01L21/56 ,  H01L23/3157 ,  H01L23/49822 ,  H01L23/49833 ,  H01L24/16 ,  H01L2224/16227

Abstract: A semiconductor package including one or more dam structures and the method of forming are provided. A semiconductor package may include an interposer, a semiconductor die bonded to a first side of the interposer, an encapsulant on the first side of the interposer encircling the semiconductor die, a substrate bonded to the a second side of the interposer, an underfill between the interposer and the substrate, and one or more of dam structures on the substrate. The one or more dam structures may be disposed adjacent respective corners of the interposer and may be in direct contact with the underfill. The coefficient of thermal expansion of the one or more of dam structures may be smaller than the coefficient of thermal expansion of the underfill.